Oxide heterojunction for detection of infrared radiation
A detector that includes an all-oxide, Schottky-type heterojunction. The “metal” side of the heterojunction is formed, for example, from a dysprosium (“Dy”) doped cadmium oxide (“CdO”) (i.e., CdO:Dy). The semiconductor side of the heterojunction is formed, for example, from cadmium magnesium oxide (“CdMgO”). On the metal side of the junction, “hot” electrons are created through the excitation of surface plasmon polaritons by infrared radiation. The hot electrons are able to cross the Schottky-type barrier of the heterojunction into the conduction band of the semiconductor where they can be detected. The working wavelength of infrared radiation that is being detected can be adjusted or tuned by modifying the Dy content of Dy-doped CdO. The height of the Schottky-type barrier can also be adjusted by modifying the composition of CdMgO, which allows for the optimization of the Schottky-type barrier height for a given working wavelength.
1. A detector for detecting infrared radiation, the detector comprising:
a first portion formed of a cadmium oxide doped with dysprosium;
a second portion formed of a semiconducting material; and
a heterojunction between the first portion and the second portion, the heterojunction forming a Schottky-type barrier.
2. The detector of claim 1 , wherein the detector is uncooled.
3. The detector of claim 1 , wherein the first portion of the detector reflects infrared radiation when a wavelength of the infrared radiation is below a filter cutoff.
4. The detector of claim 3 , wherein the filter cutoff is based on a concentration of dysprosium in the cadmium oxide.
5. The detector of claim 1 , wherein the cadmium oxide is doped with a metal having a valence state of + 3.
6. The detector of claim 1 , wherein the cadmium oxide is alloyed with calcium.
7. The detector of claim 6 , wherein a wavelength of infrared radiation incident upon the first portion creates hot carriers and is controlled based on a concentration of calcium in the conducting metal oxide.
8. The detector of claim 1 , wherein infrared radiation incident upon the first portion of the detector has a wavelength between 1.5 micrometers and 12 micrometers.
9. The detector of claim 1 , wherein the detector is operable at temperatures between 50° F. and 90° F.
10. The detector of claim 1 , wherein the semiconducting material is cadmium magnesium oxide.
11. A detector for detecting infrared radiation, the detector comprising:
a first portion formed of a conducting metal oxide, wherein the conducting metal oxide is cadmium oxide;
a second portion formed of a semiconducting material; and
a junction between the first portion and the second portion, the junction forming a Schottky-type barrier,
wherein the semiconducting material is cadmium magnesium oxide,
wherein a height of the Schottky-type barrier is controlled based on a relative ratio of cadmium to magnesium in the cadmium magnesium oxide.
12. The detector of claim 11 , wherein the cadmium oxide is doped with dysprosium.
13. The detector of claim 12 , wherein a wavelength of infrared radiation that creates the hot carriers is controlled based on a concentration of dysprosium in the conducting metal oxide.
14. The detector of claim 12 , wherein the first portion of the detector reflects infrared radiation when a wavelength of the infrared radiation is below a filter cutoff.
15. The detector of claim 14 , wherein the filter cutoff is based on a concentration of dysprosium in the conducting metal oxide.
16. The detector of claim 11 , wherein the detector is uncooled.
17. The detector of claim 11 , wherein the first portion is configured to convert incident infrared radiation within a predetermined wavelength range into hot carriers, and wherein the hot carriers are injected from a conduction band of the conducting metal oxide across the junction to a conduction band of the semiconducting material.
18. A detector for detecting infrared radiation, the detector comprising:
a first portion formed of a conducting metal oxide;
a second portion formed of a semiconducting material; and
a junction between the first portion and the second portion, the junction forming a Schottky-type barrier,
wherein the detector is operable at temperatures between 50° F. and 90° F.,
wherein an electron mobility of the conducting metal oxide is greater than about 200 cm 2 /V·s, and
wherein the electron mobility of the conducting metal oxide is between about 200 cm 2 /V·s and 500 cm 2 /V·s.
19. The detector of claim 18 , wherein the first portion is configured to convert incident infrared radiation within a predetermined wavelength range into hot carriers, and wherein the hot carriers are injected from a conduction band of the conducting metal oxide across the junction to a conduction band of the semiconducting material.