MEMS cavity substrate
In accordance with an example embodiment of this disclosure, a micro-electro-mechanical system (MEMS) device comprises a substrate, a CMOS die, and a MEMS die, each of which comprises a top side and a bottom side. The bottom side of the CMOS die is coupled to the top side of the substrate, and the MEMS die is coupled to the top side of the CMOS die, and there is a cavity positioned between the CMOS die and the substrate. The cavity may be sealed by a sealing substance, and may be filled with a filler substance (e.g., an adhesive) that is different than the sealing substance (e.g., a gaseous or non-gaseous substance). The cavity may be fully or partially surrounded by one or more downward-protruding portions of the CMOS die and/or one or more upward-protruding portions of the substrate.
1. A micro-electro-mechanical system (MEMS) device comprising:
a substrate comprising a top side and a bottom side;
an integrated circuit (IC) die comprising a top side and a bottom side, where the bottom side of the IC die is coupled to the top side of the substrate;
a MEMS die coupled to the top side of the IC die; and
a pedestal that maintains a gap between the IC die and the substrate.
2. The MEMS device of claim 1 , wherein at least a portion of the gap is filled with a gas.
3. The MEMS device of claim 1 , wherein the gap extends laterally from at least three sides of the pedestal.
4. The MEMS device of claim 1 , wherein the gap laterally surrounds the pedestal.
5. The MEMS device of claim 1 , wherein the pedestal is the only pedestal that maintains the gap between the IC die and the substrate.
6. The MEMS device of claim 1 , wherein the pedestal covers a center of the bottom side of the IC die and/or a center of the top side of the substrate.
7. The MEMS device of claim 1 , wherein the pedestal comprises a downward protruding portion of the IC die and/or an upward protruding portion of the substrate.
8. A micro-electro-mechanical system (MEMS) device comprising:
a substrate comprising a top side and a bottom side;
an integrated circuit (IC) die comprising MEMS signal processing circuitry, the IC die comprising a top side and a bottom side that is coupled to the top side of the substrate; and
a pedestal between the IC die and the substrate that maintains a gap between the IC die and the substrate.
9. The MEMS device of claim 8 , wherein at least a portion of the gap is filled with a gas.
10. The MEMS device of claim 8 , wherein the pedestal is the only pedestal that maintains the gap between the IC die and the substrate.
11. The MEMS device of claim 8 , wherein the pedestal comprises a downward protruding portion of the IC die and/or an upward protruding portion of the substrate.
12. A micro-electro-mechanical system (MEMS) device comprising:
a substrate comprising a top side and a bottom side;
an integrated circuit (IC) die comprising a top side and a bottom side, where the bottom side of the IC die is coupled to the top side of the substrate;
a MEMS die coupled to the top side of the IC die; and
a gap between the IC die and the substrate and adjacent to the IC die, wherein the gap is at least partially filled with a gas.
13. The MEMS device of claim 12 , wherein the gap comprises a stress isolation gap.
14. The MEMS device of claim 12 , comprising a standoff that maintains the gap between the IC die and the substrate.
15. The MEMS device of claim 14 , wherein the gap laterally surrounds the standoff.
16. The MEMS device of claim 14 , wherein the standoff is the only standoff that maintains the gap between the IC die and the substrate.
17. The MEMS device of claim 14 , wherein the standoff covers a center of the bottom side of the IC die and/or a center of the top side of the substrate.
18. The MEMS device of claim 14 , wherein the standoff comprises a downward protruding portion of the IC die.
19. The MEMS device of claim 14 , wherein the standoff comprises an upward protruding portion of the substrate.
20. The MEMS device of claim 14 , wherein the standoff is an intervening layer between the IC die and the substrate.