Methods to reduce debonding forces on flexible semiconductor films disposed on vapor-releasing adhesives
A method comprises providing a handle substrate having a front surface and a back surface; providing a layer of flexible semiconductor material having a front surface and a back surface and an at least partially sacrificial backing layer stack on the back surface of the layer of flexible semiconductor material; bonding the front surface of the layer of flexible semiconductor material to the front surface of the handle substrate; removing at least a portion of the at least partially sacrificial backing layer stack from the back surface of the layer of flexible semiconductor material; opening outgassing paths through the layer of flexible semiconductor material; and processing the layer of flexible semiconductor material.
1. A method, comprising:
providing an at least partially sacrificial backing layer stack on a back surface of a semiconductor layer;
controllably spalling the semiconductor layer by separating the semiconductor layer at a plane extending through the semiconductor layer parallel to the at least partially sacrificial backing layer stack;
bonding a front surface of the spalled semiconductor layer to a front surface of a substrate;
removing at least a portion of the at least partially sacrificial backing layer stack from the back surface of the semiconductor layer;
opening outgassing paths through the semiconductor layer; and
processing the semiconductor layer.
2. The method of claim 1 , wherein bonding a front surface of the spalled semiconductor layer to a front surface of a substrate comprises applying an epoxy adhesive to at least a portion of the front surface of the substrate and/or at least a portion of the front surface of the spalled semiconductor layer.
3. The method of claim 2 , further comprising applying pressure to distribute the epoxy adhesive between the front surface of the substrate and the semiconductor layer.
4. The method of claim 1 , wherein the semiconductor layer comprises material selected from the group consisting of silicon, germanium, SiGe, bulk III-V materials, epitaxially grown semiconductor layers, any of the foregoing materials having doped layers, any of the foregoing materials having metallic layers, any of the foregoing materials having passivating layers, and combinations of the foregoing materials.
5. The method of claim 1 , wherein the semiconductor layer comprises silicon.
6. The method of claim 1 , wherein the at least partially sacrificial backing layer stack comprises an adhesion layer disposed on the back surface of the semiconductor layer, a seed layer disposed on the adhesion layer, a stressor layer disposed on the seed layer, and a transfer tape disposed on the stressor layer.
7. The method of claim 1 , wherein processing the semiconductor layer comprises at least one of patterning, thermally treating, and depositing a film on the semiconductor layer.
8. The method of claim 1 , wherein controllably spalling the semiconductor layer comprises mechanically guiding a portion of the sacrificial backing layer stack to induce and sustain a spalling mode fracture.
9. A method, comprising:
providing a stressor layer stack on a back surface of a semiconductor substrate;
spalling the semiconductor substrate at a plane extending through the semiconductor substrate parallel to the back surface of the semiconductor substrate;
adhesively bonding an exposed front surface of the semiconductor substrate to a handle substrate;
removing at least a portion of the stressor layer stack from the back surface of the semiconductor substrate;
applying a hardmask to the back surface of the semiconductor substrate exposed by removing the at least a portion of the stressor layer stack;
forming semiconductor cells in the semiconductor substrate under the hardmask such that the formed semiconductor cells are spaced apart from each other; and
allowing the epoxy adhesive to outgas from the spaces defined between the semiconductor cells.
10. The method of claim 9 , wherein adhesively bonding an exposed front surface of the semiconductor substrate to a handle substrate comprises applying an epoxy adhesive to at least one of the exposed front surface of the semiconductor substrate and the handle substrate.
11. The method of claim 9 , further comprising applying pressure to distribute the epoxy adhesive between the exposed front surface of the semiconductor substrate and the handle substrate.
12. The method of claim 9 , wherein the semiconductor substrate comprises material selected from the group consisting of silicon, germanium, SiGe, bulk III-V materials, epitaxially grown semiconductor layers, any of the foregoing materials having doped layers, any of the foregoing materials having metallic layers, any of the foregoing materials having passivating layers, and combinations of the foregoing materials.
13. The method of claim 9 , wherein the semiconductor substrate comprises silicon.
14. The method of claim 9 , wherein the stressor layer stack comprises an adhesion layer disposed on the back surface of the semiconductor substrate, a seed layer disposed on the adhesion layer, a stressor layer disposed on the seed layer, and a transfer tape disposed on the stressor layer.
15. The method of claim 9 , wherein processing the semiconductor substrate comprises at least one of patterning, thermally treating, and depositing a film on the semiconductor substrate.
16. The method of claim 9 , wherein spalling the semiconductor substrate at a plane extending through the semiconductor substrate parallel to the back surface of the semiconductor substrate comprises mechanically guiding a portion of the stressor layer stack to induce and sustain a spalling mode fracture along the plane.