GAAS/SIGE-BICMOS-based transceiver system-in-package for E-band frequency applications
An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifier. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.
1. An e-band transceiver comprising a transmitter circuit and a receiver circuit, wherein the transmitter circuit comprises:
a surface mounted technology (SMT) module including:
a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifier; and
a non-volatile memory configured to store calibration data, wherein said calibration data (i) allows a chip by chip calibration and (ii) avoids a calibration rejection procedure.
2. The e-band transceiver of claim 1 , wherein the SiGe BiCMOS converter further comprises a digital interface.
3. The e-band transceiver of claim 2 , wherein the digital interface is configured as a digital control interface for controlling one of bias, type of channel filters and output power levels of the SMT module.
4. The e-band transceiver of claim 3 , wherein the digital control interface is configured as one of an I 2 C or SPI interface.
5. The e-band transceiver of claim 2 , wherein the digital interface is coupled to a non-volatile memory.
6. The e-band transceiver of claim 1 , wherein the SMT module is a system-in-package chip.
7. The e-band transceiver of claim 1 , wherein the receiver circuit comprises:
a receiver-side SMT module including:
a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.
8. The e-band transceiver according to claim 1 , wherein said calibration comprises accounting for mixer bias for full rejection of local oscillator leakage.
9. The e-band transceiver according to claim 1 , wherein said calibration is performed during a package production test phase.
10. The e-band transceiver according to claim 1 , wherein said calibration compensates for process variations of the GaAs output amplifier.
11. The apparatus according to claim 1 , wherein said amplifier is configured to provide higher power levels and higher linearity on a transmitter side.