Producing a light-emitting semiconductor component by connecting first and second semiconductor bodies
The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body ( 1 ), which comprises an active zone ( 11 ) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body ( 1 ) through a radiation exit surface ( 1 a ), and—a second semiconductor body ( 2 ), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body ( 1 ) and the second semiconductor body ( 2 ) are produced separately from each other,—the second semiconductor body ( 2 ) is electrically inactive, and—the second semiconductor body ( 2 ) is in direct contact with the radiation exit surface ( 1 a ) and is attached there to the first semiconductor body ( 1 ) without connecting means.
1. A light-emitting semiconductor component comprising:
a first semiconductor body, which comprises an active zone, in which electromagnetic radiation is generated during the operation of the light-emitting semiconductor component, said electromagnetic radiation leaving the first semiconductor body at least partly through a radiation exit area; and
a second semiconductor body, which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength,
wherein the second semiconductor body is electrically inactive,
wherein the second semiconductor body is in direct contact with the radiation exit area and is fixed to the first semiconductor body there, in a manner free of connecting means,
wherein the radiation exit area and the outer area of the second semiconductor body facing the radiation exit area in each case have a root-mean-square roughness value of at most 2 nm, and
wherein the second semiconductor body is based on a III-V compound semiconductor material.
2. The light-emitting semiconductor component according to claim 1 , wherein the radiation exit area and the outer area of the second semiconductor body facing the radiation exit area in each case have a root-mean-square roughness value of at most 0.2 nm.
3. The light-emitting semiconductor component according to claim 1 , wherein the first semiconductor body is based on a nitride compound semiconductor material.
4. The light-emitting semiconductor component according to claim 1 , wherein the first semiconductor body is electrically contact-connected exclusively from a side of the first semiconductor body facing away from the second semiconductor body.
5. The light-emitting semiconductor component according to claim 4 , wherein the second semiconductor body comprises at least one multi quantum well structure which is optically pumped by the electromagnetic radiation generated in the first semiconductor body.
6. The light-emitting semiconductor component according to claim 1 , wherein the first semiconductor body and the second semiconductor body have substantially the same optical refractive index.
7. The light-emitting semiconductor component according to claim 1 , wherein the second semiconductor body is based on a material system AlGaIn and at least one element from the group comprising N, As, P.
8. The light-emitting semiconductor component according to claim 1 , wherein the second semiconductor body has a thickness of at most 6 μm.
9. The light-emitting semiconductor component according to claim 1 , wherein the second semiconductor body has a refractive index of at least 2.4.
10. The light-emitting semiconductor component according to claim 1 , wherein the first semiconductor body and the second semiconductor body are produced separately from one another.
11. The light-emitting semiconductor component according to claim 1 , which produces warm white light during operation.
12. The light-emitting semiconductor component according to claim 1 , which produces cold white light during operation.