IP Library Granted Patent US 10,793,964
Granted Patent B2
US 10,793,964 · App. 15/146,718 · Granted Oct 6, 2020

Pre-treated functionalized multi-walled carbon nanotube based methane sensor

Inventors: Ralu Divan (Darien, IL); M. Tanim Humayun (Chicago, IL); Igor Paprotny (Chicago, IL); Lara A. Gundel (Berkeley, CA)
Assignees: UChicago Argonne, LLC; The Regents of the University of California
C25D9/08C01B32/168G01N27/127G01N27/308G01N33/0047C01B2202/06
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Quick Facts
Patent No.
US 10,793,964
App. No.
15/146,718
Granted
Oct 6, 2020
Kind
B2
Abstract

A method of manufacturing a functionalized pre-treated carbon nanotube. Atomic Layer deposition is utilized to functionalize a pre-treated carbon nanotube. The functionalized pre-treated carbon nanotube may be used in a chemiresistor, including for methane detection.

Claims (13)

1. A process for manufacturing a chemresistor comprising:

fabricating electrodes on a substrate;

depositing carbon nanotubes on the fabricated electrodes;

pre-treating the carbon nanotubes for 1-20 minutes with ozone and UV to induce surface defects; and

depositing by atomic layer deposition, a plurality of nanoparticles consisting of a metal oxide functionalizing agent on the surface defects.

2. The process of claim 1 , wherein depositing the carbon nanotubes comprises dissolving the carbon nanotubes in a solvent, depositing the solution on the fabricated electrodes, and removing the solvent.

3. The process of claim 1 , wherein atomic layer deposition is at a temperature between 175° C. and 220° C.

4. The process of claim 3 , wherein the temperature is 200° C. to 220° C.

5. The process of claim 4 , wherein the atomic layer deposition includes the step of exposing the carbon nanotubes to a first precursor comprising diethylzinc and a second precursor comprising water.

6. The process of claim 1 , wherein the deposited carbon nanotubes are multi-walled carbon nanotubes (MWCNT).

7. The process of claim 6 , wherein depositing the MWCNT further comprises drop depositing a solution of MWCNT and baking until the solvent is evaporated.

8. The process of claim 1 , further comprising selective functionalization.

9. The process for manufacturing a chemresistor of claim 1 , wherein the deposited metal is deposited to a thickness of 1-4 nm.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 4, 2020
From: GUNDEL, LARA
To: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Reel/Frame 052562/0179 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 31, 2020
From: DIVAN, RALU
To: UCHICAGO ARGONNE, LLC
Reel/Frame 052270/0379 →
CONFIRMATORY LICENSE Recorded Aug 3, 2016
From: UCHICAGO ARGONNE, LLC
To: ENERGY, UNITED STATES DEPARTMENT OF
Reel/Frame 039626/0633 →
Continuity (1)
Related Publication 20170322174A1 · Nov 9, 2017