IP Library Granted Patent US 10,389,960
Granted Patent B2
US 10,389,960 · App. 15/149,330 · Granted Aug 20, 2019

Image sensor with glow suppression output circuitry

Inventors: Gregory Oscar Moberg (Rochester, NY); Christopher Parks (Pittsford, NY)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H04N5/37206G11C19/00G11C19/282H01L27/14612H01L27/14636H01L27/14689H01L27/14806H01L27/14831H04N5/357H04N5/359H04N5/3698H04N5/372H04N5/378H04N5/3728
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Quick Facts
Patent No.
US 10,389,960
App. No.
15/149,330
Granted
Aug 20, 2019
Kind
B2
Abstract

A charge-coupled device (CCD) image sensor is provided. The CCD image sensor may include an array of photosensors that transfer charge to multiple vertical CCD shift registers, which then in turn transfer the charge to a horizontal CCD shift register. The horizontal CCD shift register then feeds an output buffer circuit. The output buffer circuit can include multiple output stages, each of which can include a source-follower transistor coupled in series with a current sink transistor and at least one cascode transistor. The current sink transistor may have its gate terminal shorted to ground. In one arrangement, the cascode transistor has a gate terminal that receives a non-zero bias voltage. In another arrangement, the cascode transistor has a gate terminal that is also shorted to ground and operates in depletion mode.

Claims (28)

1. An image sensor, comprising:

an array of image pixels arranged in rows and columns;

a plurality of vertical shift registers, wherein each column of image pixels in the array of image pixels is coupled to a respective vertical shift register of the plurality of vertical shift registers;

a horizontal shift register that receives charge from the plurality of vertical shift registers; and

an output buffer circuit that receives the charge from the horizontal shift register and that includes a current sink transistor, a cascode transistor, and an amplifier transistor, wherein the amplifier transistor has a gate terminal that receives signals from the horizontal shift register, and wherein the amplifier transistor is coupled in series with the current sink transistor and the cascode transistor.

2. The image sensor of claim 1 , wherein the current sink transistor has a gate terminal that is shorted to a ground power supply line.

3. The image sensor of claim 2 , wherein the cascode transistor has a gate terminal that is connected to a voltage bias terminal that is different than the ground power supply line.

4. The image sensor of claim 2 , wherein the cascode transistor has a gate terminal that is also shorted to the ground power supply line.

5. The image sensor of claim 1 , wherein the output buffer circuit further comprises:

an additional cascode transistor that is connected in series with the cascode transistor.

6. The image sensor defined in claim 1 , wherein the cascode transistor is interposed between the amplifier transistor and the current sink transistor.

7. A charge-coupled device (CCD) image sensor, comprising:

an array of pixels arranged in columns;

a plurality of vertical CCD shift registers, wherein each vertical CCD shift register is coupled to a respective column of the array of pixels;

a horizontal CCD shift register coupled to the plurality of vertical CCD shift registers; and

an output buffer circuit that receives signals from the horizontal CCD shift register and that includes a first output stage and a second output stage, wherein the first output stage includes a source follower transistor, a current sink transistor, and a cascode transistor coupled in series and wherein the second output stage also includes a source follower transistor, a current sink transistor, and a cascode transistor coupled in series.

8. The CCD image sensor of claim 7 , wherein the current sink transistors of the first and second output stages have gate terminals that are shorted to ground.

9. The CCD image sensor of claim 8 , wherein the cascode transistors of the first and second output stages have gate terminals that are also shorted to ground.

10. The CCD image sensor of claim 8 , wherein the cascode transistors of the first and second output stages have gate terminals that are not shorted to ground.

11. A charge-coupled device (CCD) image sensor, comprising:

an array of pixels arranged in columns;

a plurality of vertical CCD shift registers, wherein each vertical CCD shift register is coupled to a respective column of the array of pixels;

a horizontal CCD shift register coupled to the plurality of vertical CCD shift registers; and

an output buffer circuit that receives signals from the horizontal CCD shift register and that includes a first output stage and a second output stage, wherein the first output stage includes a source follower transistor that has a gate terminal that receives the signals from the horizontal CCD shift register, a current sink transistor, and a cascode transistor coupled in series between first and second power supply lines and wherein the cascode transistor is interposed between the source follower transistor and the current sink transistor.

12. The CCD image sensor defined in claim 11 , wherein the current sink transistor is interposed between the cascode transistor and the second power supply line and wherein the source follower transistor is interposed between the cascode transistor and the first power supply line.

13. The CCD image sensor defined in claim 12 , wherein the current sink transistor has a gate terminal that is coupled to the second power supply line.

14. The CCD image sensor defined in claim 13 , wherein the first power supply line is a positive power supply line and the second power supply line is a ground power supply line.

15. The CCD image sensor defined in claim 13 , wherein the second output stage includes an additional source follower transistor that has an additional gate terminal and wherein the additional gate terminal of the additional source follower transistor is coupled to a node that is interposed between the cascode transistor and the source follower transistor.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 041187, FRAME 0295 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064151/0203 →
SECURITY INTEREST Recorded Dec 23, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 041187/0295 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2016
From: MOBERG, GREGORY OSCAR; PARKS, CHRISTOPHER
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 038513/0015 →
Continuity (2)
Provisional Application 62279185 · Jan 15, 2016
Related Publication 20170208283A1 · Jul 20, 2017