Semiconductor device having a plurality of source lines being laid in both X and Y directions
A device is disclosed. The device includes a semiconductor substrate, a plurality of source lines formed on a surface of the semiconductor substrate. The plurality of source lines are laid in both X and Y directions. The device further includes a plurality of gate lines laid out over source lines in X direction in the plurality of source lines, a source contact line that connects source lines in the plurality of source lines that are terminating in Y direction, a gate contact line that connects the plurality of gate lines and a drain contact.
1. A device comprising:
a semiconductor substrate;
a plurality of source lines formed on a surface of the semiconductor substrate, wherein the plurality of source lines are laid in both X and Y directions;
a plurality of gate lines laid out over source lines in X direction in the plurality of source lines;
a source contact line that connects source lines in the plurality of source lines that are terminating in Y direction;
a gate contact line that connects the plurality of gate lines; and
a drain contact.
2. The device of claim 1 , wherein the surface of the semiconductor substrate includes an epitaxial layer.
3. The device of claim 2 , wherein top surface of the epitaxial layer includes a p-type body implant.
4. The device of claim 1 , wherein n-type layers run along the source lines in the plurality of source lines in Y direction.
5. The device of claim 1 , wherein the gate lines protrude the surface of the semiconductor surface.
6. The device of claim 1 , further including an isolation layer between the source layer and the gate layer.
7. The device of claim 6 , wherein the isolation layer exists only in X direction.
8. The device of claim 1 , wherein a distance between individual source lines in the plurality of source lines is user defined based for desired electrical characteristics of the device.
9. The device of claim 1 , further includes an isolation layer buried in trenches to cover buried parts of the plurality of source lines.