Methods of forming colloidal nanocrystal-based thin film devices
Methods of forming colloidal nanocrystal (NC)-based thin film devicesare disclosed. The methods include the steps of depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands; and doping the NC thin-film with a metal.
1. A method of forming colloidal nanocrystal (NC)-based thin film devices, the method comprising the steps of:
depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands; and
doping the NC thin-film with a metal.
2. The method of claim 1 , wherein the doping step comprises evaporation and thermal diffusion.
3. The method of claim 1 , wherein the metal is at least one of indium-based, lead-based, tin-based, gallium-based or selenium-based.
4. The method of claim 1 , wherein the doping step occurs at about room temperature.
5. The method of claim 1 , wherein the doping step is initiated by annealing.
6. The method of claim 1 , wherein the doping step comprises blanket deposition.
7. The method of claim 1 , wherein the NCs are at least one of cadmium-based, lead-based, zinc-based, or bismuth-based.
8. The method of claim 1 , wherein the substrate is flexible.
9. The method of claim 1 , wherein the metal is patterned on the NC thin film device.
10. The method of claim 1 , further comprising depositing one or more additional layer of NCs on the previously deposited layer of NCs.
11. A method of forming colloidal nanocrystal (NC)-based thin film devices, the method comprising the step of:
depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands.
12. The method of claim 11 , wherein the NCs are at least one of cadmium-based, lead-based, zinc-based, or bismuth-based.
13. The method of claim 11 , wherein the substrate is flexible.
14. A method of forming colloidal nanocrystal (NC)-based thin film devices, the method comprising the steps of:
depositing a dispersion of NCs on a substrate; and
doping the NC thin film with a metal by evaporation and thermal diffusion to form a NC-based thin film device.
15. The method of claim 14 , wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands.
16. The method of claim 14 , wherein the doping step comprises annealing the NC thin film with a metal, thereby diffusing a portion of the metal into the NC thin film.
17. The method of claim 14 , wherein the metal is at least one of indium-based, lead-based, or selenium-based.
18. The method of claim 14 , wherein the deposited NC thin-film is doped at about room temperature.
19. The method of claim 14 , wherein the deposited NC thin film is doped by annealing.
20. The method of claim 14 , wherein the NCs are at least one of cadmium-based, lead-based, zinc-based, or bismuth-based.
21. The method of claim 14 , wherein the substrate is flexible.
22. The method of claim 14 , wherein the metal is patterned on the NC thin film device.