Method of reducing a sheet resistance in an electronic device, and an electronic device
Various embodiments provide a method of reducing a sheet resistance in an electronic device encapsulated at least partially in an encapsulation material, wherein the method comprises: providing an electronic device comprising a multilayer structure and being at least partially encapsulated by an encapsulation material; and locally introducing energy into the multilayer structure for reducing a sheet resistance.
1 . A method of reducing a sheet resistance in an electronic device, the method comprising:
providing an electronic device comprising a multilayer structure; and
locally introducing energy into the multilayer structure for reducing a sheet resistance.
2 . The method according to claim 1 , wherein the locally energy introduction is performed from a backside of the electronic device.
3 . The method according to claim 1 , wherein the multilayer structure is at least partially encapsulated by an encapsulation material.
4 . The method according to claim 1 , wherein the multilayer structure comprising a metallization layer.
5 . The method according to claim 3 , wherein the locally introducing of energy is performed in such a way that the encapsulation material remains at a temperature which is below a predetermined threshold.
6 . The method according to claim 1 , wherein the multilayer structure comprises a semiconductor layer having a thickness of less than 200 micrometer.
7 . The method according to claim 1 , wherein the energy is locally introduced by using a light source.
8 . The method according to claim 7 , wherein the light source is one selected out of the group consisting of:
laser;
focusable laser;
rapid thermal processing light source; and
lamps.
9 . The method according to claim 1 , further comprising forming a mask before applying the energy.
10 . The method according to claim 9 , wherein the forming of the mask includes a patterning of the mask.
11 . The method according to claim 1 , further comprising forming an absorption layer before applying the energy.
12 . The method according to claim 1 , wherein a layer of the multilayer structure is selected out of the group consisting of:
a metallization layer;
a contact layer;
a layer of porous metal;
a doped layer;
a semiconductor layer.
13 . The method according to claim 1 , wherein the locally introduced energy is used to densify a porous metal layer of the multilayer structure.
14 . The method according to claim 1 , wherein the locally introduced energy is used to activate dopants doped into the multilayer structure.
15 . A method of manufacturing an electronic device, the method comprising:
providing a raw electronic device comprising an electronic chip;
forming a contact layer onto the electronic chip; and
processing the contact layer by locally introducing energy into the contact layer.
16 . An electronic device comprising:
a semiconductor chip comprising a multilayer structure comprising a semiconductor layer and a metallization layer
wherein the electronic device comprises a backside comprising at least one first portion and at least one second portion, wherein the at least one first portion and the at least one second portion were exposed to a different temperature during the manufacturing process of the electronic device.
17 . The electronic device according to claim 16 , wherein the at least one first portion is formed by the metallization layer and the at least one second portion is formed by an encapsulation material.
18 . The electronic device according to claim 16 , wherein the semiconductor layer has a thickness of less than 50 micrometer.
19 . The electronic device according to claim 16 , wherein the metallization layer may comprising a material selected out of the group consisting of:
copper;
aluminum; and
a mixture thereof.