Methods of forming and using materials containing silicon and nitrogen
Some embodiments include methods utilizing atomic layer deposition to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses Sil 4 as one precursor and uses a nitrogen-containing material as another precursor. Some embodiments include methods of forming a structure in which a chalcogenide region is formed over a semiconductor substrate; and in which Sil 4 is used as a precursor during formation of silicon nitride material directly against a surface of the chalcogenide region.
1. A method of forming material, comprising utilization of atomic layer deposition with Sil 4 as one precursor and a nitrogen-containing material comprising t-butyl hydrazine as another precursor to form a material consisting of silicon nitride directly onto a surface of a chalcogenide material, the deposition being conducted at a temperature of less than or equal to 250° C.
2. The method of claim 1 wherein the atomic layer deposition comprises a deposition sequence utilizing multiple iterations of a pulse sequence, and wherein all of the iterations use the same nitrogen-containing material as precursor.
3. The method of claim 1 wherein the atomic layer deposition comprises a deposition sequence utilizing multiple iterations of a pulse sequence, and wherein some of the iterations use different nitrogen-containing material as precursor than other iterations.
4. The method of claim 3 wherein t-butyl hydrazine is used as precursor in some iterations, and wherein NH 3 is used as precursor in other iterations.
5. The method of claim 1 wherein the nitrogen-containing material consists of t-butyl hydrazine.
6. The method of claim 1 wherein the nitrogen-containing material further comprises NH 3 .
7. The method of claim 1 wherein the atomic layer deposition is conducted at temperature of less than or equal to about 175° C.
8. The method of claim 1 wherein the chalcogenide comprises at least one of arsenic, selenium and indium.
9. The method of claim 1 wherein the chalcogenide comprises at least one of indium, antimony and tellurium.
10. The method of claim 1 wherein the chalcogenide comprises at least one of germanium, antimony and tellurium.
11. A method of forming material, comprising:
forming a chalcogenide region over a substrate; and
after forming the chalcogenide region, performing atomic layer deposition onto the chalcogenide region at a temperature of less than or equal to about 250° C. utilizing Sil 4 as one precursor and a nitrogen-containing material comprising t-butyl hydrazine as another precursor.
12. The method of claim 11 wherein the atomic layer deposition deposits material consisting essentially of silicon nitride.
13. A method of forming material, comprising:
forming a chalcogenide region over a substrate; and
after forming the chalcogenide region, depositing a material onto the chalcogenide region at a temperature of less than or equal to about 250° C. utilizing Sil 4 as one precursor and a nitrogen-containing material comprising t-butyl hydrazine as another precursor.
14. The method of claim 13 wherein the depositing the material forms the material directly against a sidewall of the chalcogenide region.
15. The method of claim 13 wherein the nitrogen-containing precursor consists of t-butyl hydrazine.