Thin film transistor substrate having high reliability metal oxide semiconductor material
The present disclosure relates to a thin film transistor substrate having a high reliability oxide semiconductor material including a metal oxide semiconductor material. A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a semiconductor layer including an oxide semiconductor material combining one or more of indium, gallium and zinc, oxygen, and a doping material. The doping material may be a group 15 or 16 gaseous element. The semiconductor layer has a channel area overlapping with the gate electrode with a gate insulating layer, a source area extended from one side of the channel area, and a drain area extended from another side of the channel area, a source electrode connected to the source area, and a drain electrode connected to the drain area.
1. A thin film transistor substrate comprising:
a substrate;
a gate electrode disposed on the substrate;
a semiconductor layer, the semiconductor layer comprising:
a channel area, at least a portion of the channel area overlapping with the gate electrode and including a first oxide semiconductor material that is a combination of oxygen, a doping material, indium, gallium, and zinc, the first oxide semiconductor material comprising oxygen vacancies, wherein doping material particles occupy 60-80% of the oxygen vacancies;
a source area extending from one side of the channel area; and
a drain area extending from another side of the channel area;
a gate insulating layer in between the gate electrode and the semiconductor layer;
a source electrode connected to at least a portion of the source area;
a drain electrode connected to at least a portion of the drain area.
2. The thin film transistor substrate of claim 1 , wherein the oxygen and the indium, gallium, and zinc in sum are 95 to 99 atomic % of the first oxide semiconductor material, and wherein the doping material is 1 to 5 atomic % of the first oxide semiconductor material.
3. The thin film transistor substrate of claim 1 , wherein the doping material is any one of group 15 elements or group 16 elements.
4. The thin film transistor substrate of claim 3 , wherein the doping material includes any one selected from a group consisting of nitrogen (N), phosphorus (P), fluorine (F), selenium (Se), and tellurium (Te).
5. The thin film transistor substrate of claim 3 , wherein the doping material is bonded to the indium, gallium, and zinc.
6. The thin film transistor substrate of claim 1 , wherein the source area and the drain area include the first oxide semiconductor material.
7. The thin film transistor substrate of claim 1 , wherein the source area and the drain area include a second oxide semiconductor material that is a combination of oxygen and one or more of indium, gallium, and zinc without the doping material of the first oxide semiconductor material.
8. The thin film transistor substrate of claim 1 , wherein at least a portion of the source area and at least a portion of the drain area are conductorized.
9. A method of forming a thin film transistor substrate, the method comprising:
forming a gate electrode on a substrate;
forming a semiconductor layer, the semiconductor layer including a channel area, a source area extending from one side of the channel area, and a drain area extending from another side of the channel area, at least a portion of the channel area overlapping with the gate electrode and including a first oxide semiconductor material that is a combination of oxygen, a doping material, indium, gallium, and zinc, the first oxide semiconductor material comprising oxygen vacancies, wherein the doping material particles occupy 60-80% of the oxygen vacancies;
forming a gate insulating layer in between the gate electrode and the semiconductor layer;
forming a source electrode connected to at least a portion of the source area; and
forming a drain electrode connected to at least a portion of the drain area.
10. The method of claim 9 , wherein forming the semiconductor layer comprises:
depositing the indium, gallium, and zinc on the substrate with exposure to oxygen gas and gas of the dopant material in a chamber.
11. The method of claim 10 , wherein depositing the indium, gallium, and zinc comprises sputtering an indium target, a gallium target, and a zinc target.
12. The method of claim 10 , wherein an amount of the dopant material gas is 50% to 70% of an amount of total gas in the chamber.
13. The method of claim 9 , wherein the oxygen and the indium, gallium, and zinc in sum are 95 to 99 atomic % of the first oxide semiconductor material, and wherein the doping material is 1 to 5 atomic % of the first oxide semiconductor material.
14. The method of claim 9 , wherein the doping material is any one of group 15 elements or group 16 elements.
15. The method of claim 14 , wherein the doping material includes any one selected from a group consisting of nitrogen (N), phosphorus (P), fluorine (F), selenium (Se), and tellurium (Te).
16. The method of claim 14 , wherein the doping material is bonded to the indium, gallium, and zinc.
17. The method of claim 9 , wherein forming the semiconductor layer further comprises applying plasma treatment to at least a portion of the source area and the drain area to conductorize the portion of the source area and the drain area.
18. The method of claim 9 , wherein forming the semiconductor layer comprises:
depositing a layer of the first oxide semiconductor material on the substrate; and
patterning the layer of the first oxide semiconductor material to form the channel area and the source and drain areas of the semiconductor layer.
19. The method of claim 9 , wherein forming the semiconductor layer comprises:
forming the channel area;
depositing a layer of a second oxide semiconductor material that is a combination of oxygen and one or more of indium, gallium, and zinc without the doping material on or below the channel area; and
patterning the layer of the second oxide semiconductor material to form the source and drain areas of the semiconductor layer.