Organic photoelectronic device and image sensor
An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p 1 /n 1 ) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p 2 /n 2 ) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p 3 /n 3 ) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p 1 /n 1 ) and the second composition ratio (p 2 /n 2 ).
1. An organic photoelectronic device, comprising:
a first electrode and a second electrode facing each other; and
a light-absorption layer between the first electrode and the second electrode, the light-absorption layer including,
a first region closest to the first electrode, the first region having a first composition ratio (p 1 /n 1 ) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p 2 /n 2 ) of the p-type semiconductor relative to the n-type semiconductor, and
a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p 3 /n 3 ) of the p-type semiconductor relative to the n-type semiconductor that is greater than the first composition ratio (p 1 /n 1 ) and the second composition ratio (p 2 /n 2 ), wherein
the third region includes the n-type semiconductor in a lesser amount than the first region and the second region.
2. The organic photoelectronic device of claim 1 , wherein the first composition ratio (p 1 /n 1 ) is the same as the second composition ratio (p 2 /n 2 ).
3. The organic photoelectronic device of claim 1 , wherein a composition ratio (p/n) of the p-type semiconductor relative to the n-type semiconductor of the light-absorption layer is discontinuously increased and then decreased along the thickness direction.
4. The organic photoelectronic device of claim 1 , wherein
the light-absorption layer is configured to absorb light in at least one part of a visible ray wavelength region; and
a maximum light-absorption position of the light-absorption layer is different depending on the visible ray wavelength region.
5. The organic photoelectronic device of claim 4 , wherein
the visible ray wavelength region includes first visible light and second visible light having a different wavelength region from the first visible light;
the first visible light is absorbed at a maximum in one of the first region and the second region of the light-absorption layer; and
the second visible light is absorbed at a maximum in the third region of the light-absorption layer.
6. The organic photoelectronic device of claim 5 , wherein
one of the p-type semiconductor and the n-type semiconductor is a light-absorbing material configured to selectively absorb the first visible light; and
the other of the p-type semiconductor and the n-type semiconductor is a light-absorbing material configured to absorb the first visible light and the second visible light.
7. The organic photoelectronic device of claim 6 , wherein
the p-type semiconductor is the light-absorbing material configured to selectively absorb the first visible light;
the n-type semiconductor is the light-absorbing material configured to absorb the first visible light and the second visible light.
8. The organic photoelectronic device of claim 1 , wherein the third region includes the p-type semiconductor in a lesser amount than the first region and the second region.
9. The organic photoelectronic device of claim 6 , wherein
the first visible light has a wavelength region of about 500 nm to about 600 nm; and
the second visible light has a wavelength region of greater than or equal to about 380 nm and less than 500 nm.
10. The organic photoelectronic device of claim 6 , wherein
wherein one of the p-type semiconductor and the n-type semiconductor includes one of C60, C70, a derivative thereof, and a combination thereof.
11. An image sensor comprising the organic photoelectronic device of claim 1 .
12. The image sensor of claim 11 , wherein
the light-absorption layer is configured to absorb light in at least one part of a visible ray wavelength region;
the visible ray wavelength region includes first visible light, second visible light, and third visible light,
each of the first visible light, the second visible light and the third visible light are different wavelength regions,
the organic photoelectronic device is configured to selectively absorb the first visible light; and
the image sensor further comprises a semiconductor substrate integrated with a plurality of first photo-sensing devices configured to sense the second visible light and a plurality of second photo-sensing devices configured to sense the third visible light.
13. The image sensor of claim 12 , wherein the plurality of first photo-sensing devices and the plurality of second photo-sensing devices are spaced apart from each other in a horizontal direction.
14. The image sensor of claim 13 , further comprising:
a first color filter overlapping the plurality of first photo-sensing devices, the first color filter configured to selectively transmit the second visible light; and
a second color filter overlapping the plurality of second photo-sensing devices, the second color filter configured to selectively transmit the third visible light.
15. The image sensor of claim 12 , wherein the plurality of first photo-sensing devices and the plurality of second photo-sensing devices are spaced apart from each other in a vertical direction.
16. The image sensor of claim 11 , wherein
the light-absorption layer is configured to absorb light in at least one part of a visible ray wavelength region;
the visible ray wavelength region includes first visible light, second visible light, and third visible light, each of the first visible light, the second visible light and the third visible light are different wavelength regions;
the organic photoelectronic device is a first organic photoelectronic device configured to selectively absorb the first visible light;
the image sensor further comprises a second organic photoelectronic device configured to selectively absorb the second visible light and a third organic photoelectronic device configured to selectively absorb the third visible light; and
the first organic photoelectronic device, the second organic photoelectronic device, and the third organic photoelectronic device are sequentially stacked.
17. The image sensor of claim 12 , wherein
the first visible light has a wavelength region of about 500 nm to about 600 nm;
the second visible light has a wavelength region of greater than or equal to about 380 nm and less than 500 nm; and
the third visible light has a wavelength region of greater than about 600 nm and less than or equal to about 780 nm.
18. The image sensor of claim 16 , wherein
the first visible light has a wavelength region of about 500 nm to about 600 nm;
the second visible light has a wavelength region of greater than or equal to about 380 nm and less than 500 nm; and
the third visible light has a wavelength region of greater than about 600 nm and less than or equal to about 780 nm.
19. An electronic device comprising the image sensor of claim 11 .
20. An organic photoelectronic device comprising:
a first electrode;
a first light-absorption layer on the first electrode, the first light-absorption layer having a first composition ratio (p 1 /n 1 ) of a p-type semiconductor relative to an n-type semiconductor;
a second light-absorption layer on the first light-absorption layer, the second light-absorption layer having a second composition ratio (p 2 /n 2 ) of the p-type semiconductor relative to the n-type semiconductor different from the first composition ratio (p 1 /n 1 );
a third light-absorption layer on the second light-absorption layer, the third light-absorption layer having the first composition ratio (p 1 /n 1 ); and
a second electrode on the third light-absorption layer, wherein
the second composition ratio (p 2 /n 2 ) is greater than the first composition ratio (p 1 /n 1 , and
the second light-absorption layer includes the n-type semiconductor in a lesser amount than the first light-absorption layer and the third light-absorption layer.