Optoelectronic semiconductor chip
An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1 b . The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.
1. An optoelectronic semiconductor chip comprising:
a semiconductor body of semiconductor material comprising a p-side, an n-side and an active layer between the p-side and the n-side, the active layer configured to generate radiation during operation;
a p-contact layer electrically contacting the p-side of the semiconductor body; and
an n-contact layer electrical contacting the n-side of the semiconductor body,
wherein the n-contact layer contains a transparent conductive oxide (TCO) layer and a mirror layer, the TCO layer being arranged between the n-side of the semiconductor body and the mirror layer,
wherein the n-contact layer passes through the p-side of the semiconductor body via a hole,
wherein the hole projects into the n-side of the semiconductor body, and
wherein the TCO layer is arranged in the hole between the n-side of the semiconductor body and the mirror layer.
2. The optoelectronic semiconductor chip according to claim 1 , wherein the mirror layer contains silver.
3. The optoelectronic semiconductor chip according to claim 1 , wherein the p-contact layer and the n-contact layer are arranged on the same side of the semiconductor body.
4. The optoelectronic semiconductor chip according to claim 3 ,
wherein the p-contact layer directly adjoins the p-side of the semiconductor body,
wherein the n-contact layer is arranged on a side of the p-contact layer remote from the semiconductor body, and
wherein the chip further comprises an electrically insulating layer arranged between the p-contact layer and the n-contact layer.
5. The optoelectronic semiconductor chip according to claim 3 , wherein the n-contact layer passes to the n-side through the p-contact layer.
6. The optoelectronic semiconductor chip according to claim 1 , wherein the hole is lined with an electrically insulating layer, the electrically insulating layer directly adjoining the TCO layer and the mirror layer.
7. The optoelectronic semiconductor chip according to claim 1 , wherein the TCO layer comprises zinc oxide.
8. The optoelectronic semiconductor chip according to claim 1 , wherein the TCO layer comprises indium tin oxide.
9. The optoelectronic semiconductor chip according to claim 1 , wherein the TCO layer comprises a material selected from the group consisting of tin oxide, aluminum zinc oxide, aluminum tin oxide, gallium tin oxide, gallium zinc oxide and indium zinc oxide.
10. The optoelectronic semiconductor chip according to claim 1 , wherein the TCO layer has a thickness of greater than 0.5 nm.
11. The optoelectronic semiconductor chip according to claim 1 , wherein the TCO layer has a thickness in a range between 15 nm and 25 nm, inclusive.
12. The optoelectronic semiconductor chip according to claim 1 , wherein the semiconductor body comprises oblique side faces.
13. The optoelectronic semiconductor chip according to claim 1 , wherein the semiconductor body comprises GaN.
14. The optoelectronic semiconductor chip according to claim 1 ,
wherein the n-contact layer passes through the p-side by means of a plurality of holes and ends in the n-side of the semiconductor body, and
wherein the TCO layer is arranged in the plurality of holes between the n-side of the semiconductor body and the mirror layer.
15. An optoelectronic semiconductor chip comprising:
a semiconductor body of semiconductor material;
a p-contact layer; and
an n-contact layer,
wherein the semiconductor body comprises an active layer for generating radiation during operation,
wherein the semiconductor body comprises a p-side and an n-side, the active layer being arranged between the p-side and the n-side,
wherein the p-contact layer electrically contacts the p-side of the semiconductor body,
wherein the n-contact layer electrically contacts the n-side of the semiconductor body,
wherein the n-contact layer contains a TCO layer and a mirror layer, wherein the TCO layer is arranged between the n-side of the semiconductor body and the mirror layer, and
wherein the mirror layer contains silver.
16. The optoelectronic semiconductor chip according to claim 15 , wherein the n-contact passes through the p-side by means of a plurality of holes, each of the holes ending in the n-side of the semiconductor body, and wherein the TCO layer is arranged in the plurality of holes between the n-side of the semiconductor body and the mirror layer.
17. The optoelectronic semiconductor chip according to claim 15 , wherein the TCO layer comprises zinc oxide or indium tin oxide.
18. The optoelectronic semiconductor chip according to claim 15 , wherein the TCO layer has a thickness in a range between 15 nm and 25 nm, inclusive.
19. The optoelectronic semiconductor chip according to claim 15 , wherein there is no direct contact between the mirror layer and the semiconductor body.