METHOD OF MAKING VERTICAL AND BOTTOM BIAS E-FUSES AND RELATED DEVICES
A method for producing semiconductor devices including an electrical fuse (e-fuse) and the resulting device are provided. Embodiments include forming a gate electrode (PC); forming at least one gate contact (CB) over the PC; forming at least one source/drain contact (CA); and forming an e-fuse including a resistor metal (RM) between at least one CB and an equal number of CAs to dissipate heat generated by the PC.
1 . A method comprising:
forming a gate electrode (PC);
forming at least one gate contact (CB) over the PC;
forming at least one second contact (CA) over and to a side of the PC; and
forming an electrically programmable fuse (e-fuse) over the PC, the e-fuse comprising a resistor metal (RM) connected between at least one CB and an equal number of CAs providing a heat dissipation path.
2 . The method according to claim 1 , comprising:
connecting the at least one CA to a metal 1 landing or via landing.
3 . The method according to claim 1 , comprising:
forming the PC in an anode region and the CA in a cathode region.
4 . The method according to claim 3 , comprising:
forming the e-fuse with a line width that decreases in a direction towards the cathode region.
5 . The method according to claim 3 , comprising:
forming a second PC on a side of the at least one CA remote from the first PC;
forming at least one second CB on the second PC; and
forming a second e-fuse comprising a resistor metal (RM) between the at least one second CB and the CAs.
6 . The method according to claim 5 , comprising:
forming the CA over a trench silicide contact (TS).
7 . The method according to claim 1 , comprising:
forming the PC in a cathode region and the CA in an anode region.
8 . The method according to claim 7 , comprising:
forming the e-fuse with a line width that decreases in a direction towards the cathode region.
9 . The method according to claim 7 , comprising:
forming a second PC on a side of the at least one CA remote from the first PC;
forming at least one second CB on the second PC; and
forming a second electrical fuse (e-fuse) comprising a resistor metal (RM) between the at least one second CB and the CAs.
10 . A device comprising:
a gate electrode (PC);
at least one gate contact (CB) formed over the PC;
at least one source/drain contact (CA); and
an electrically programmable fuse (e-fuse) comprising a resistor metal (RM) formed between at least one CB and an equal number of CAs to dissipate heat generated by the PC.
11 . The device according to 10 , wherein:
the at least one CA is connected to a metal 1 landing or via landing, and
the e-fuse is a middle of the line (MOL) e-fuse.
12 . The device according to claim 10 , wherein the PC is formed in an anode region and the CA in a cathode region.
13 . The device according to claim 12 , wherein the e-fuse is formed with a line width that decreases in a direction towards the cathode region.
14 . The device according to claim 12 , comprising:
a second PC formed on a side of the at least one CA remote from the first PC;
at least one second CB formed on the second PC; and
a second e-fuse comprising a resistor metal (RM) formed between the at least one second CB and the CAs to dissipate heat generated by the PC.
15 . The device according to claim 14 , wherein the CA is formed over a trench silicide (TS).
16 . The device according to claim 10 , wherein the PC is formed in a cathode region and the CA in an anode region.
17 . The device according to claim 16 , wherein the e-fuse is formed with a line width that decreases in a direction towards the cathode region.
18 . The device according to claim 16 , comprising:
a second PC formed on a side of the at least one CA remote from the first PC;
at least one second CB formed on the second PC; and
a second e-fuse comprising a resistor metal (RM) formed between the at least one second CB and the CAs to dissipate heat generated by the PC.
19 . A method comprising:
forming a first gate electrode (PC) and a second PC separated from the first PC;
forming at least one first gate contact (CB) over the first PC;
forming at least one second CB over the second PC; and
forming an electrically programmable fuse (e-fuse) over the PC, the e-fuse comprising a resistor metal (RM) connected between at least one first CB and an equal number of second CBs providing a heat dissipation path.
20 . The method according to claim 19 , comprising:
forming the first PC in a cathode region;
forming the second PC in an anode region; and
forming the e-fuse with a line width that decreases in width in a direction towards the cathode region.
21 . The method according to claim 19 , further comprising:
forming a third PC on a side of the second PC remote from the first PC;
forming at least one third CB over the third PC; and
forming a second e-fuse comprising a resistor metal (RM) between the at least one second CB and an equal number of third CBs.
22 . A device comprising:
a first gate electrode (PC) and a second PC separated from the first PC;
at least one first gate contact (CB) formed over the first PC;
at least one second CB formed over the second PC; and
an electrically programmable fuse (e-fuse) comprising a resistor metal (RM) formed between at least one first CB and an equal number of second CBs to dissipate heat generated by the first PC and second PC.
23 . The device according to claim 22 , wherein:
the first PC is formed in a cathode region;
the second PC is formed in an anode region; and
the e-fuse is formed with a line width that decreases in width in a direction towards the cathode region.
24 . The device according to claim 22 , comprising:
a third PC formed on a side of the second PC remote from the first PC;
at least one third CB formed over the third PC; and
a second e-fuse comprising a resistor metal (RM) formed between the at least one second CB and an equal number of third CBs to dissipate heat generated by the first PC and second PC.