IP Library › Granted Patent US 10,050,209
Granted Patent B2
US 10,050,209 · App. 15/157,672 · Granted Aug 14, 2018

Light-emitting element, light-emitting device, authentication device, and electronic apparatus

Inventors: Yuiga Hamade (Fujimi, JP); Tetsuji Fujita (Chino, JP)
Assignee: Seiko Epson Corporation
H01L51/0061C09K11/025C09K11/06H01L51/0052H01L51/0058H01L51/0071H01L51/0072H01L51/5004H05B33/14H05B33/20C09K2211/1007C09K2211/1014C09K2211/1081H01L51/0054H01L51/0059H01L51/508H01L51/5012H01L2251/556
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Quick Facts
Patent No.
US 10,050,209
App. No.
15/157,672
Granted
Aug 14, 2018
Kind
B2
Abstract

A light-emitting element includes an anode, a cathode, a light-emitting layer which is provided between the anode and the cathode and emits light in a wavelength range of 700 nm or more by conducting electricity between the anode and the cathode, and an electron transport layer which is provided between the light-emitting layer and the cathode, and includes a first electron transport layer located on the cathode side and a second electron transport layer located on the light-emitting layer side, wherein organic materials contained in the light-emitting layer, a hole injection layer, the first electron transport layer, and the second electron transport layer have a glass transition temperature Tg of 135° C. or higher or do not have a glass transition temperature.

Claims (34)

1. A light-emitting element, comprising:

an anode;

a cathode;

a light-emitting layer which is provided between the anode and the cathode and emits light in a wavelength range of 700 nm or more by conducting electricity between the anode and the cathode;

a hole injection layer which is provided between the light-emitting layer and the anode; and

an electron transport layer which is provided between the light-emitting layer and the cathode, and includes a first electron transport layer located on the cathode side and a second electron transport layer located on the light-emitting layer side, wherein

organic materials contained in the light-emitting layer, the hole injection layer, the first electron transport layer, and the second electron transport layer have a glass transition temperature Tg of 135° C. or higher or do not have a glass transition temperature,

wherein the hole injection layer comprises a HIL-B compound or a HIL-C compound, the HIL-B compound having the following general formula:

 where R 1 -R 4 are selected from a hydrogen atom, an arylamino group, a carbazolyl group, and combinations thereof; and

the HIL-C compound having the following general formula:

 where R 5 -R 6 are selected from an arylamino group, a carbazolyl group, and combinations thereof;

wherein the light emitting layer comprises a thiadiazole-based compound (IRD1) having the following general formula:

 where R is selected from an aryl group, an arylamino group, a triarylamino group, and derivatives thereof;

wherein the first electron transport layer comprises a first anthracene-based compound having an anthracene skeleton and a nitrogen-containing heterocyclic skeleton, the anthracene skeleton having the following general formula:

 where R 1 -R 7 are selected from a hydrogen atom, an alkyl group, an aryl group, an aryl group with substituent, an arylamino group, and combinations thereof; and

wherein the second electron transport layer comprises a second anthracene-based compound lacking a heterocyclic skeleton and having the general formula:

 where R 1 and R 2 are selected from a hydrogen atom, an alkyl group, an aryl group, an aryl group with substituent, an arylamino group, an arylamino group with substituent, and combinations thereof.

2. The light-emitting element according to claim 1 , wherein the second anthracene-based compound has a glass transition temperature Tg of 145° C. or higher or does not have a glass transition temperature.

3. A light-emitting device, comprising the light-emitting element according to claim 2 .

4. An authentication device, comprising the light-emitting element according to claim 2 .

5. An electronic apparatus, comprising the light-emitting element according to claim 2 .

6. The light-emitting element according to claim 1 , wherein

the glass transition temperature (T g ) of the light-emitting layer is represented by Tg(Host),

the glass transition temperature (T g ) of the hole injection layer is represented by Tg(HIL), and

the glass transition temperature (T g ) of the second electron transport layer is represented by Tg(ETL2), and

wherein the glass transition temperature (Tg) of the light-emitting layer Tg(Host), the glass transition temperature (Tg) of the hole injection layer Tg(HIL), and the glass transition temperature (Tg) of the second anthracene-based compound Tg(ETL2) satisfy the following relational formula (I):

Tg ( HIL )> Tg (Host) and Tg ( ETL 2)> Tg (Host)  (I).

7. The light-emitting element according to claim 6 , wherein further Tg(HIL) and Tg(ETL2) satisfy the following relational formula (II):

Tg ( HIL )> Tg ( ETL 2)  (II).

8. A light-emitting device, comprising the light-emitting element according to claim 6 .

9. The light-emitting element according to claim 1 , wherein the light-emitting element is configured to conduct electricity between the anode and the cathode at a current density of 0.5 A/cm 2 or more and 2.0 A/cm 2 or less.

10. A light-emitting device, comprising the light-emitting element according to claim 1 .

11. An authentication device, comprising the light-emitting element according to claim 1 .

12. An electronic apparatus, comprising the light-emitting element according to claim 1 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 2, 2026
From: SEIKO EPSON CORPORATION
To: SHIHENG CREATION LIMITED
Reel/Frame 074265/0077 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 18, 2016
From: HAMADE, YUIGA; FUJITA, TETSUJI
To: SEIKO EPSON CORPORATION
Reel/Frame 038633/0816 →
Priority Claims (1)
JP 2015-113354 · Jun 3, 2015 · national
Continuity (1)
Related Publication 20160359117A1 · Dec 8, 2016