Epitaxy reactor and susceptor system for improved epitaxial wafer flatness
A susceptor supports a semiconductor wafer and includes a substantially cylindrical body comprising an outer rim having an upper surface. The body also includes a recess extending into the body from the upper surface to a recess floor such that the recess is sized and shaped for receiving the wafer therein. The body further includes a ledge extending between the rim and the recess floor. The ledge includes a ramp comprising a first surface, a second surface, and a third surface. The first surface is oriented at a first angle with respect to the upper surface; the second surface is oriented at a second angle oriented with respect to the upper surface; and the third surface is oriented at a third angle with respect to the upper surface. Further, the second angle is greater than the first angle.
1. An epitaxial deposition reactor for growing a thin layer of material on a semiconductor wafer, the reactor comprising:
a reaction chamber defining an interior space;
at least one rotatable support positioned within the reaction chamber; and
a susceptor attached to the at least one support, wherein the susceptor is configured to support the semiconductor wafer, the susceptor comprising:
a substantially cylindrical body comprising an outer rim having an upper surface;
a recess extending into the body from the upper surface to a recess floor, the recess being sized and shaped for receiving the semiconductor wafer therein; and
a ledge extending between the rim and the recess floor, wherein the ledge includes a ramp including:
a first surface oriented at a first acute angle with respect to the upper surface;
a second surface obliquely oriented at a second acute angle with respect to the upper surface, wherein the second angle is greater than the first angle; and
a third surface obliquely oriented at a third acute angle with respect to the upper surface, the third surface positioned radially outward from the first and second surfaces, wherein the first surface is positioned radially outward from the second surface, and
wherein the ledge includes a plurality of ramps.
2. The reactor of claim 1 , wherein the first angle is between approximately 0.0° and approximately 3.0°.
3. The reactor of claim 1 , wherein the second angle is between approximately 3.0° and approximately 10.0°.
4. The reactor of claim 1 , wherein the ramp is aligned with a notch formed in the wafer such that the ramp is configured to reduce a buildup of the material proximate the notch.
5. The reactor of claim 1 , wherein the first surface comprises a first length and the second surface comprises a second length that is shorter than the first length.
6. The reactor of claim 5 , wherein the third surface comprises a third length that is shorter than the first length and the second length.
7. The reactor of claim 1 , wherein the second angle is greater than the first and third angles and the third angle is greater than the first angle.
8. The reactor of claim 1 , wherein the third surface extends from a recess wall such that the third surface is positioned radially outward from the first surface and the second surface.
9. A susceptor for supporting a wafer in a heated chamber, the wafer having a front surface, a back surface opposite the front surface, the susceptor comprising:
a substantially cylindrical body comprising an outer rim having an upper surface;
a recess extending into the body from the upper surface to a recess floor, the recess being sized and shaped for receiving the wafer therein; and
a ledge extending between the rim and the recess floor, wherein the ledge includes a ramp comprising:
a first surface oriented at a first acute angle with respect to the upper surface;
a second surface obliquely oriented at a second acute angle with respect to the upper surface, wherein the second angle is greater than the first angle; and
a third surface obliquely oriented at a third acute angle with respect to the upper surface, the third surface is positioned radially outward from the first and second surfaces, wherein the first surface is positioned radially outward from the second surface.
10. The susceptor of claim 9 , wherein the ledge includes a plurality of ramps.
11. The susceptor of claim 9 , wherein the first angle is between approximately 0.0° and approximately 3.0°.
12. The susceptor of claim 9 , wherein the second angle is between approximately 3.0° and approximately 10.0°.
13. The susceptor of claim 9 , wherein the ramp is aligned with a notch formed in the wafer such that the ramp is configured to reduce a buildup of a material proximate the notch.
14. The susceptor of claim 9 , wherein the first surface comprises a first length and the second surface comprises a second length that is shorter than the first length.
15. The susceptor of claim 14 , wherein the third surface comprises a third length that is shorter than the first length and the second length.
16. The susceptor of claim 9 , wherein the second angle is greater than the first and third angles and the third angle is greater than the first angle.
17. The susceptor of claim 9 , wherein the third surface extends from a recess wall such that the third surface is positioned radially outward from the first surface and the second surface.
18. An epitaxial deposition reactor in combination with a semiconductor wafer having a notch, the reactor comprising:
a reaction chamber defining an interior space;
a susceptor positioned within the reaction chamber, wherein the susceptor supports the semiconductor wafer, the susceptor comprising:
a substantially cylindrical body comprising an outer rim having an upper surface;
a recess extending into the body from the upper surface to a recess floor, the recess being sized and shaped to receive the semiconductor wafer therein; and
a ledge extending between the rim and the recess floor, wherein the ledge includes a ramp including:
a first surface oriented at a first acute angle with respect to the upper surface;
a second surface obliquely oriented at a second acute angle with respect to the upper surface, wherein the second angle is greater than the first angle; and
a third surface obliquely oriented at a third acute angle with respect to the upper surface, the third surface positioned radially outward from the first and second surfaces, wherein the first surface is positioned radially outward from the second surface.
19. The susceptor of claim 18 , wherein the second angle is between approximately 3.0° and approximately 10.0°.
20. The susceptor of claim 18 , wherein the ramp is aligned with the notch formed in the wafer such that the ramp is configured to reduce a buildup of a material proximate the notch.