DUAL SILICIDE LINER FLOW FOR ENABLING LOW CONTACT RESISTANCE
A method for fabricating a semiconductor device includes depositing a sacrificial liner in self-aligned contact openings in first and second regions. The openings are filled with a sacrificial material. The second region is blocked with a first mask to remove the sacrificial material from the first region. The first mask is removed from the second region, and the sacrificial liner is removed from the first region. A first liner is formed in the openings of the first region, and first contacts are formed in the first region on the first liner. The first region is blocked with a second mask to remove the sacrificial material from the second region. The second mask is removed from the first region, and the sacrificial liner is removed from the second region. A second liner is formed in the openings of the second region, and second contacts are formed in the second region.
1 . A semiconductor device, comprising:
a first region including n-type field effect transistors (NFETs);
a second region including p-type field effect transistors (PFETs);
a first liner formed in the self-aligned contact openings of the NFETs;
first contacts formed in the self-aligned contact openings of the NFETs on the first liner;
a second liner formed in the self-aligned contact openings of the PFETs; and
second contacts formed in the self-aligned contact openings of the PFETs on the second liner, wherein the self-aligned contact openings include only one liner in the first region and only one liner in the second region and the first liner and the second liner include different materials.
2 . The device as recited in claim 1 , wherein the first liner includes Ti.
3 . The device as recited in claim 1 , wherein the first liner includes TiN
4 . The device as recited in claim 1 , wherein the second liner includes Pt.
5 . The device as recited in claim 1 , wherein the second liner includes Ni.
6 . The device as recited in claim 1 , wherein the second liner includes a combination of Ni and Pt.
7 . The device as recited in claim 1 , wherein the first contacts and the second contacts include different materials.
8 . The device as recited in claim 1 , wherein the first liner and the second liner form silicides with underlying regions.
9 . The device as recited in claim 1 , wherein the first contacts are self-aligned contacts.
10 . The device as recited in claim 1 , wherein the second contacts are self-aligned contacts.