Polymer member based interconnect
An interconnect ( 124 ) suitable for attachment of integrated circuit assemblies to each other comprises a polymer member ( 130 ) which is conductive and/or is coated with a conductive material ( 144 ). Such interconnects replace metal bond wires in some embodiments. Other features are also provided.
1. A fabrication method comprising:
providing a substrate;
forming one or more support members on the substrate, each support member being for supporting one or more electrically conductive wires, each support member comprising one or more polymers;
forming a first layer over the substrate, the first layer laterally surrounding each support member, at least a part of a sidewall surface of each support member being spaced from a sidewall surface of the first layer to form a gap laterally bounded by the sidewall surface of the support member and the sidewall surface of the first layer;
forming the one or more wires, wherein at least a portion of each wire extends on the sidewall surface of at least one support member in the corresponding gap laterally bounded by the sidewall surfaces of the support member and the first layer, each wire having a top surface comprising solder, wherein forming the one or more wires comprises, after forming the first layer, plating a conductor comprising the solder while using the first layer as a mask, at least a portion of the conductor being plated into each said gap.
2. The method of claim 1 wherein forming the one or more wires comprises, before forming the first layer, forming a conductive layer on a sidewall of each support member, the conductive layer comprising a seed layer for at least part of said plating, each said gap comprising a space bounded by a corresponding sidewall surface of the seed layer and the corresponding sidewall surface of the first layer, said portion of the conductor being plated into each said space.
3. The method of claim 1 wherein in each wire, the plated conductor extends from the substrate to a top of the corresponding support member.
4. The method of claim 1 wherein the first layer is formed such that a top surface of each support member is below a top of an adjacent sidewall surface of the first layer at the corresponding gap laterally bounded by the support member's and the first layer's sidewall surfaces.
5. The method of claim 4 wherein said plating the conductor comprises:
plating a first conductor into each said gap with the first layer acting as a mask, wherein a top surface of the first conductor is below the top surface of the first layer; and
plating a second conductor over the first conductor with the first layer acting as a mask, the second conductor being electrically connected to the first conductor and having a top surface comprising said solder.
6. The method of claim 5 wherein during said plating of the second conductor, the first layer physically contacts the sidewall of the first conductor to prevent solder formation below the second conductor.
7. The method of claim 5 wherein:
the first conductor comprises a layer of copper;
the second conductor comprises a layer of nickel formed after the layer of copper, and a layer of solder formed after the layer of nickel.
8. The method of claim 1 further comprising reflowing the solder of at least one said wire to connect the wire to at least one of: (i) an integrated circuit, (ii) an assembly comprising an integrated circuit, (iii) an integrated circuit packaging substrate.
9. The method of claim 1 further comprising removing the first layer and then reflowing the solder, wherein in each wire, the solder overlies a conductive layer which is more wettable by the solder than the wire surface underlying the conductive layer, a greater wettability of the conductive layer serving to impede the solder from reaching the wire surface underlying the conductive layer during the solder reflow.
10. A fabrication method comprising:
providing a substrate;
forming one or more support members on the substrate, each support member being for supporting one or more electrically conductive wires, each support member comprising one or more polymers;
forming a first layer over the substrate, the first layer laterally surrounding each support member;
forming the one or more wires, wherein at least a portion of each wire extends on a sidewall surface of at least one support member in a gap between the support member and the first layer, each wire having a top surface comprising solder, wherein forming the one or more wires comprises, after forming the first layer, plating a conductor comprising the solder while using the first layer as a mask, at least a portion of the conductor being plated into the gap;
wherein each support member is dielectric.
11. A fabrication method comprising:
providing a substrate;
forming one or more support members on the substrate, each support member being for supporting one or more electrically conductive wires, each support member comprising one or more polymers;
forming a first layer over the substrate, the first layer laterally surrounding each support member;
forming the one or more wires, wherein at least a portion of each wire extends on a sidewall surface of at least one support member in a gap between the support member and the first layer, each wire having a top surface comprising solder, wherein forming the one or more wires comprises, after forming the first layer, plating a conductor comprising the solder while using the first layer as a mask, at least a portion of the conductor being plated into the gap;
removing the entire first layer after plating the conductor.
12. A fabrication method comprising:
providing a substrate;
forming one or more support members on the substrate, each support member being for supporting one or more electrically conductive wires, each support member comprising one or more polymers;
forming a first layer over the substrate, the first layer laterally surrounding each support member;
forming the one or more wires, wherein at least a portion of each wire extends on a sidewall surface of at least one support member in a gap between the support member and the first layer, each wire having a top surface comprising solder, wherein forming the one or more wires comprises, after forming the first layer, plating a conductor comprising the solder while using the first layer as a mask, at least a portion of the conductor being plated into the gap;
wherein for at least one support member, for at least two wires, each wire has at least a portion extending on the sidewall surface of the support member.
13. A fabrication method comprising:
providing a substrate;
forming one or more support members on the substrate, each support member being for supporting one or more electrically conductive wires, each support member comprising one or more polymers;
forming the one or more electrically conductive wires, wherein at least a portion of each wire extends on a sidewall surface of at least one support member, each wire having a top surface comprising solder;
after forming the one or more wires, forming a dielectric layer which laterally surrounds at least a length of each said at least a portion of each wire but exposes at least one conductive region of each wire; and
after forming the dielectric layer, mounting one or more first microelectronic components above the dielectric layer, each first microelectronic component being at least one of (i) an integrated circuit, (ii) an assembly comprising an integrated circuit, (iii) an integrated circuit packaging substrate; and
attaching one or more contact pads of each first microelectronic component to said one or more conductive regions;
wherein for at least one support member, for at least two wires, each wire has at least a portion extending on the sidewall surface of the support member.
14. The method of claim 13 further comprising, before forming the dielectric layer, attaching one or more second microelectronic components to the substrate, wherein each second microelectronic component is at least one of (i) an integrated circuit, (ii) an assembly comprising an integrated circuit, (iii) an integrated circuit packaging substrate;
wherein at least one first microelectronic component has a portion overlying at least one second microelectronic component.
15. The method of claim 14 wherein at least one second microelectronic component is not covered by the dielectric layer.
16. The method of claim 14 wherein at least one second microelectronic component has a top surface which is at least as high as a top of the dielectric layer.
17. The method of claim 13 wherein forming the dielectric layer comprises:
forming the dielectric layer to cover each interconnect structure; and then
thinning the dielectric layer from a top of the dielectric layer to expose each said conductive region;
wherein said thinning comprises chemical mechanical polishing of a top surface of the dielectric layer.
18. The method of claim 1 , further comprising:
removing at least part of the first layer around one or more of the support members and the wires; and then
forming an encapsulant encapsulating the support members and the wires.
19. The method of claim 1 , further comprising:
removing the entire first layer after forming the wires; and then
forming an encapsulant encapsulating the support members and the wires.