Semiconductor structure and a method of making thereof
An integrated circuit package including a substrate having a cavity and one or more semiconductor devices assembled within the cavity of the substrate. The one or more semiconductor devices electrically coupled using redistribution layers, wherein the cavity is a first cavity, the substrate includes the first cavity and a second cavity, the one or more semiconductor devices are fully embedded within the first cavity of the substrate, the one or more semiconductor devices are fully embedded between the substrate and a first redistribution layer of said redistribution layers, bumps are fully embedded within the second cavity of the substrate, the bumps are fully embedded between the substrate and the first redistribution layer of said redistribution layers, and the first redistribution layer is fully embedded between the substrate and a semiconductor interposer.
1. An integrated circuit package, comprising:
a substrate having a cavity; and
one or more semiconductor devices assembled within the cavity of the substrate, the one or more semiconductor devices electrically coupled using redistribution layers, wherein
the cavity is a first cavity,
the substrate includes the first cavity and a second cavity,
the one or more semiconductor devices are fully embedded within the first cavity of the substrate,
the one or more semiconductor devices are fully embedded between the substrate and a first redistribution layer of said redistribution layers,
bumps are fully embedded without a semiconductor device within the second cavity of the substrate,
the bumps are fully embedded between the substrate and the first redistribution layer of said redistribution layers, and
the first redistribution layer is fully embedded between the substrate and a semiconductor interposer.
2. The integrated circuit package according to claim 1 , further comprising:
a heat spreader, wherein
the heat spreader is integrated on the interposer.
3. The integrated circuit package according to claim 1 , wherein
the one or more semiconductor devices are electrically coupled to the substrate using wirebond.
4. The integrated circuit package according to claim 1 , wherein
the substrate is a semiconductor substrate.
5. The integrated circuit package according to claim 1 , wherein
the substrate is an organic substrate.
6. The integrated circuit package according to claim 1 , wherein
the substrate is a glass substrate.
7. The integrated circuit package according to claim 1 , wherein
the one or more semiconductor devices are electrically coupled to the semiconductor interposer using flip chip or a wirebond method.
8. The integrated circuit package according to claim 1 , wherein
exposed surfaces are covered with High-Z material to create radiation hardened package.
9. An integrated circuit package, comprising:
a substrate having a cavity; and
one or more semiconductor devices assembled within the cavity of the substrate, the one or more semiconductor devices electrically coupled using redistribution layers, wherein
the cavity is a first cavity,
the substrate includes the first cavity and a second cavity,
the one or more semiconductor devices are fully embedded within the first cavity of the substrate,
the one or more semiconductor devices are fully embedded between the substrate and a first redistribution layer of said redistribution layers,
bumps are fully embedded within the second cavity of the substrate,
the bumps are fully embedded between the substrate and the first redistribution layer of said redistribution layers,
the first redistribution layer is fully embedded between the substrate and a semiconductor interposer, and
two opposite sides of the first cavity are kept open to allow fluid flow within the cavity from the front to the back of the entire structure of the substrate while bumps are fully embedded within the second cavity.
10. The integrated circuit package according to claim 9 , wherein
the cavities are disposed either along the periphery or opposite edges of the substrate.
11. An integrated circuit package, comprising:
a substrate having a cavity; and
one or more semiconductor devices assembled within the cavity of the substrate, the one or more semiconductor devices electrically coupled using redistribution layers, wherein
the cavity is a first cavity,
the substrate includes the first cavity,
the one or more semiconductor devices are fully embedded within the first cavity of the substrate,
the one or more semiconductor devices are fully embedded between the substrate and a first redistribution layer of said redistribution layers,
bumps are fully embedded between the substrate and the first redistribution layer of said redistribution layers,
the first redistribution layer is fully embedded between the substrate and a semiconductor interposer, and
two opposite sides of the first cavity are kept open to allow fluid flow within the cavity from the front to the back of the entire structure of the substrate, wherein
the semiconductor interposer is coupled to the substrate with no second cavity.
12. The integrated circuit package according to claim 9 , wherein
two opposite sides of the first cavity and second cavity are kept open.
13. The integrated circuit package according to claim 9 , wherein
the semiconductor interposer contains one or more through interposer via.
14. The integrated circuit package according to claim 9 , wherein
no bumps or wires are used to couple the device to the interposer or couple the interposer to the substrate.
15. The integrated circuit package according to claim 9 , wherein
the cavities contain antenna(s) or passive component(s) such as capacitor, resistor, inductor or filters.
16. The integrated circuit package according to claim 9 , wherein
exposed surfaces are covered with High-Z material to create radiation hardened package.
17. The integrated circuit package according to claim 9 , wherein
the cavities contain active and/or passive component(s).
18. The integrated circuit package according to claim 11 , wherein
the cavities contain active and/or passive component(s).
19. The integrated circuit package according to claim 1 , wherein
the first cavity contains active and/or passive component(s).
20. The integrated circuit package according to claim 11 , wherein
exposed surfaces are covered with High-Z material to create radiation hardened package.