Semiconductor device having a mismatch detection and correction circuit
A semiconductor device includes: an integrated circuit (IC) including an internal circuit; and a mismatch detection and correction circuit connected to the internal circuit of the IC, the mismatch detection and correction circuit configured to detect a process mismatch and correct an error in the internal circuit caused by the process mismatch using a current difference between a first current and a second current based on a charged voltage of a capacitor.
1. A semiconductor device, comprising:
an integrated circuit (IC) including an internal circuit; and
a mismatch detection and correction circuit connected to the internal circuit of the IC, the mismatch detection and correction circuit configured to detect a process mismatch and correct an error in the internal circuit caused by the process mismatch using a current difference between a first current and a second current based on a charged voltage of a capacitor,
wherein the process mismatch is due to a variation in the manufacture of the internal circuit.
2. The device of claim 1 , wherein the mismatch detection and correction circuit detects a threshold voltage mismatch and a source-drain conductance mismatch of a transistor of the IC.
3. The device of claim 1 , wherein the mismatch detection and correction circuit comprises:
a first transistor connected between a power supply and a first terminal of a first switch;
the capacitor connected between the power supply and a first terminal of a second switch;
a second transistor connected between the power supply and a first terminal of a third switch; and
a third transistor connected between second terminals of the first, second, and third switches and a ground voltage,
wherein the third transistor is controlled by a bias voltage,
wherein gates of the first and second transistors are connected to a connection node between the capacitor and the second switch.
4. The device of claim 3 , wherein when the first and second switches are turned on and the third switch is turned off, the first current is supplied to the first transistor, and
when the first and second switches are turned off and the third switch is turned on, the second current is supplied to the second transistor, and the current difference between the first current and the second current is detected as a threshold voltage mismatch of a transistor of the IC.
5. The device of claim 4 , wherein the bias voltage is adjusted such that the first current is equal to the second current, and an error caused by the threshold voltage mismatch of the transistor of the IC is corrected by using a recovery current supplied to the third transistor in response to the adjusted bias voltage.
6. The device of claim 1 , wherein the mismatch detection and correction circuit comprises:
a first transistor connected between a power supply and a first node;
a second transistor connected between the power supply and a second node;
a third transistor connected between the first node and a first terminal of a first switch;
the capacitor connected between the power supply and a first terminal of a second switch;
a fourth transistor connected between the second node and a first terminal of a third switch; and
a fifth transistor connected between second terminals of the first, second, and third switches and a ground voltage,
wherein the fifth transistor is controlled by a first bias voltage,
wherein gates of the first and second transistors are connected to a connection node between the capacitor and the second switch, and gates of the third and fourth transistors are connected to second and third bias voltages.
7. The device of claim 6 , wherein the second and third bias voltages connected to the gates of the third and fourth transistors are equal to one another,
when the first and second switches are turned on and the third switch is off, the first current is supplied to the first transistor, and
when the first and second switches are turned off and the third switch is turned on, the second current is supplied to the second transistor, and a threshold voltage mismatch of a transistor of the IC is determined by the current difference between the first current and the second current.
8. The device of claim 7 , wherein the first bias voltage is adjusted such that the first current is equal to the second current, and an error caused by the threshold voltage mismatch of the transistor of the IC is corrected by using a recovery current added to the fifth transistor in response to the adjusted first bias voltage.
9. The device of claim 6 , wherein when the second bias voltage is the ground voltage, the first current is supplied to the first transistor due to a first voltage difference between a source and a drain of the first transistor,
wherein the third bias voltage is different from the second bias voltage, and when the third bias voltage is applied to the fourth transistor, the second current is supplied to the second transistor due to a second voltage difference between a source and a drain of the second transistor, and
the third bias voltage is varied such that the second voltage difference is larger than the first voltage difference, and a source-drain conductance mismatch of the transistor of the IC is determined by the current difference between the first current and the second current.
10. The device of claim 9 , wherein the first bias voltage is varied such that the first current is equal to the second current, and an error caused by the source-drain conductance mismatch of the transistor is corrected in response to the adjusted first bias voltage.