Near field transducers (NFTS) including barrier layer and methods of forming
Devices having an air bearing surfaces (ABS), the devices including a near field transducer (NFT) that includes a disc having a front edge; a peg, the peg having a front surface at the air bearing surface of the apparatus, an opposing back surface, a top surface that extends from the front surface to the back surface, two side surfaces that expend from the front surface to the back surface and a bottom surface that extends from the front surface to the back surface; and a barrier layer, the barrier layer separating at least the back surface of the peg from the disc and the barrier layer having a thickness from 10 nm to 50 nm.
1. A device having an air bearing surface (ABS), the device comprising:
a near field transducer (NFT) comprising:
a disc having a front edge;
a peg, the peg having a front surface at the air bearing surface of the apparatus, an opposing back surface, a top surface that extends from the front surface to the back surface, two side surfaces that extend from the front surface to the back surface and a bottom surface that extends from the front surface to the back surface; and
a barrier layer, the barrier layer separating at least the back surface of the peg from the disc and the barrier layer having a thickness from 15 nm to 50 nm,
wherein the peg is in front of the front edge of the disc and the barrier layer extends from 1 nm to 15 nm in front of and behind the front edge of the disc.
2. The device according to claim 1 , wherein the barrier layer is entirely in front of the front edge of the disc and the surface of the barrier layer that contacts the back surface of the peg is greater than 2 nm away from the front edge of the disc.
3. The device according to claim 1 , wherein the barrier layer is entirely behind the front edge of the disc and the barrier layer extends from 2 nm to 20 nm behind the front edge of the disc.
4. The device according to claim 1 , wherein the barrier layer comprises bismuth (Bi), arsenic (As), gallium (Ga), germanium (Ge), tellurium (Te), lead (Pb), antimony (Sb), indium (In), tin (Sn), cadmium (Cd), thallium (Tl) silver (Ag), palladium (Pd), platinum (Pt), osmium (Os), technetium (Tc), rhenium (Re), mercury (Hg), chromium (Cr), manganese (Mn), iron (Fe), nickel (Ni), copper (Cu), zinc (Zn), niobium (Nb), or combinations thereof.
5. The device according to claim 4 , wherein the barrier layer comprises rhodium (Rh), ruthenium (Ru), iridium (Ir), tungsten (W), niobium (Nb), or combinations thereof.
6. The device according to claim 1 , wherein the barrier layer also separates the side surfaces and the top surface of the peg from the disc and the barrier layer extends along the top surface and side surfaces of the peg to the air bearing surface.
7. The device according to claim 6 , wherein the barrier layer comprises bismuth (Bi), arsenic (As), gallium (Ga), germanium (Ge), tellurium (Te), lead (Pb), antimony (Sb), indium (In), tin (Sn), cadmium (Cd), thallium (Tl) silver (Ag), palladium (Pd), platinum (Pt), rhodium (Rh), iridium (Ir), osmium (Os), ruthenium (Ru), technetium (Tc), rhenium (Re), mercury (Hg), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), tungsten (W), niobium (Nb), or combinations thereof.
8. The device according to claim 7 , wherein the barrier layer comprises rhodium (Rh), ruthenium (Ru), iridium (Ir), tungsten (W), niobium (Nb), or combinations thereof.
9. The device according to claim 6 , wherein the barrier layer has a thickness from 10 nm to 50 nm.
10. The device according to claim 6 , wherein the barrier layer comprises a first interface layer adjacent the peg and a second interface layer adjacent the disc.
11. The device according to claim 10 , wherein the first interface layer comprises rhodium (Rh), ruthenium (Ru), iridium (Ir), tungsten (W), niobium (Nb), nickel phosphate (NiP), or combinations thereof; and the second interface layer comprises iron (Fe), nickel (Ni), cobalt (Co), zinc (Zn), cadmium (Cd), manganese (Mn), chromium (Cr), tellurium (Te), antimony (Sb), alloys thereof, or compounds thereof.
12. A device having an air bearing surface (ABS), the device comprising:
a near field transducer (NFT) comprising:
a disc having a front edge;
a peg, the peg having a front surface at the air bearing surface of the apparatus, an opposing back surface, a top surface that extends from the front surface to the back surface, two side surfaces that extend from the front surface to the back surface and a bottom surface that extends from the front surface to the back surface; and
a barrier layer, the barrier layer separating at least the back surface of the peg from the disc and the barrier layer having a thickness from 15 nm to 50 nm.
wherein the peg is behind the front edge of the disc and the barrier layer further comprises a portion that separates at least the top and the side surfaces of the peg within the disc from the disc.
13. The device according to claim 12 , wherein the barrier layer further comprises a portion that is outside the disc.
14. A device having an air bearing surface (ABS), the device comprising:
a near field transducer (NFT) comprising:
a disc having a front edge;
a peg, the peg having a front surface at the air bearing surface of the apparatus, an opposing back surface, a top surface that extends from the front surface to the back surface, two side surfaces that extend from the front surface to the back surface and a bottom surface that extends from the front surface to the back surface; and
a barrier layer, the barrier layer separating at least the back surface of the peg from the disc and the barrier layer having a thickness from 15 nm to 50 nm and comprising a first interface layer adjacent the peg and a second interface layer adjacent the disc.
15. The device according to claim 14 , wherein the first interface layer comprises rhodium (Rh), ruthenium (Ru), iridium (Ir), tungsten (W), niobium (Nb), nickel phosphate (NiP), or combinations thereof; and the second interface layer comprises iron (Fe), nickel (Ni), cobalt (Co), zinc (Zn), cadmium (Cd), manganese (Mn), chromium (Cr), tellurium (Te), antimony (Sb), alloys thereof, or compounds thereof.
16. A method of forming a device comprising the steps of:
forming a peg, the peg comprising a plasmonic material;
forming a photomask structure configured to form a disc/heatsink in contact with the peg, wherein the photomask structure forms an enclosure around at least a portion of the peg;
adding an electroplating solution to the enclosure; and
applying a current to the peg, wherein application of a current forms a barrier layer on the exposed portion of the peg within the enclosure.
17. The method of claim 16 further comprising removing the remaining electroplating solution after the barrier layer has been formed and forming a disc/heatsink on the barrier layer using the photomask structure.
18. The method of claim 17 further comprising removing the photomask structure.