Semiconductor device and method of manufacturing the same
A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film ( 2 ) is formed over a substrate ( 1 ), a graphene layer ( 3 ) is grown originating from the catalyst film ( 2 ), an electrode ( 4 ) in contact with the graphene layer ( 3 ) is formed, and the catalyst film ( 2 ) is removed.
1. A semiconductor device, comprising:
a source electrode and a drain electrode;
a channel including a graphene layer suspended by the source electrode and the drain electrode;
a gate electrode which changes a band structure of the graphene layer; and
a gate insulation film formed between the gate electrode and the channel, wherein
the graphene layer extends in a direction apart from the channel over the source electrode and the drain electrode, and the channel is thinner than a portion of the graphene layer extending in the direction apart from the channel over the source electrode and the drain electrode.
2. The semiconductor device according to claim 1 , wherein
the source electrode and the drain electrode are formed over an insulator, and
the channel is formed apart from the insulator.
3. The semiconductor device according to claim 1 , further comprising:
a first wiring including the portion of the graphene layer extending in the direction apart from the channel over the source electrode; and
a second wiring including the portion of the graphene layer extending in the direction apart from the channel over the drain electrode.
4. The semiconductor device according to claim 3 , further comprising:
a first electrode connected to the first wiring, and
a second electrode connected to the second wiring.