System and method for manufacturing planarized extreme ultraviolet lithography blank
An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
1. An integrated extreme ultraviolet blank production system comprising:
a vacuum chamber for placing a substrate in a vacuum;
a flowable chemical vapor deposition system that deposits a planarization layer having a planarized top surface over the substrate, the planarization layer including a flowable film;
a cure system for curing the planarization layer without removing the substrate from the vacuum; and
a second deposition system that deposits a multi-layer stack on the planarization layer without removing the substrate from the vacuum to form the extreme ultraviolet blank.
2. The system of claim 1 , further comprising a degas system that degasses the substrate without removing the substrate from the vacuum.
3. The system of claim 1 , further comprising a preclean system that cleans the substrate without removing the substrate from the vacuum.
4. The system of claim 1 , further comprising a third deposition system that deposits a capping layer on the planarization layer without removing the substrate from the vacuum.
5. The system of claim 1 , wherein the first deposition system is configured to deposit the planarization layer to a thickness in the range of 100 Å to 10,000 Å.
6. The system of claim 1 , wherein the flowable chemical vapor deposition system can deposit the planarization layer that can level out a bump or encapsulate a particle from 10 nm to 30 nm in height on a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
7. The system of claim 1 , wherein the flowable chemical vapor deposition system can deposit the planarization layer that fill a pit having an aspect ratio from 1:6 to 30:1 in a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
8. The system of claim 1 , wherein the flowable chemical vapor deposition system can deposit the planarization layer that provides a top surface of the planarization layer having a surface smoothness under 0.5 nm RMS.
9. A method of fabricating an extreme ultraviolet blank, comprising:
a substrate in a vacuum;
depositing, using a flowable chemical vapor deposition system, a planarization layer having a planarized top surface on the substrate, the planarization layer including a flowable vapor deposition film;
curing the planarization layer; and
depositing a multi-layer stack on the planarization layer, wherein depositing the planarization layer, curing the planarization layer and depositing the multi-layer stack are performed without removing the substrate from the vacuum to form the extreme ultraviolet blank.
10. The method as claimed in claim 9 wherein the flowable vapor deposition film is such that a top surface of the planarization layer has a greater planarity than a surface underlying the planarization layer.
11. The method as claimed in claim 9 wherein depositing the planarization layer fills a pit imperfection on a surface underlying a top surface of the planarization layer to provide a smooth top surface of the planarization layer.
12. The method as claimed in claim 9 wherein depositing the planarization layer encapsulates a particle on a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
13. The method as claimed in claim 9 wherein the depositing the planarization layer fills a pit having an aspect ratio from 1:6 to 30:1 in a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
14. The method as claimed in claim 9 wherein depositing the planarization layer levels out a bump or encapsulates a particle from 10 nm to 30 nm in height on a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
15. The method as claimed in claim 9 wherein depositing the planarization layer provides a top surface of the planarization layer having a surface smoothness under 0.5 nm RMS.