Method for manufacturing metal interconnects
View Patent ↗A method for manufacturing metal interconnects. The method includes following steps. A substrate including a dielectric layer formed thereon is provided, and a plurality of trenches are formed in the dielectric layer. Next, a seed layer is formed in the trenches and on the dielectric layer and followed by masking regions of the seed layer to define a plurality of masked regions and a plurality of exposed regions for the seed layer. Subsequently, a surface treatment is performed to the exposed regions of the seed layer to form a plurality of rough surfaces on the exposed regions of the seed layer. Then, a metal layer is formed on the substrate, and the trenches are filled up with the metal layer.
1. A method for manufacturing metal interconnects, comprising:
providing a substrate comprising a dielectric layer formed thereon, and a plurality of trenches being formed in the dielectric layer;
forming a seed layer in the trenches and on the dielectric layer;
masking regions of the seed layer to define a plurality of masked regions correspondingly to the trenches and a plurality of exposed regions for the seed layer;
performing a surface treatment to the exposed regions of the seed layer to form a plurality of rough surfaces on the exposed regions of the seed layer; and
forming a metal layer on the substrate, and the trenches being filled up with the metal layer.
2. The method for manufacturing the metal interconnects according to claim 1 , further comprising forming a sacrificial layer respectively in the trenches before masking the regions of the seed layer.
3. The method for manufacturing the metal interconnects according to claim 2 , wherein the surface treatment comprises an ion bombardment.
4. The method for manufacturing the metal interconnects according to claim 3 , wherein the ion bombardment comprises producing nitrogen (N), boron (B), arsenic (As), phosphorous (P), inert, or halogen ions.
5. The method for manufacturing the metal interconnects according to claim 4 , wherein the ion bombardment comprises providing halogen ions with lower bias.
6. The method for manufacturing the metal interconnects according to claim 1 , wherein the surface treatment comprises exposure.
7. The method for manufacturing the metal interconnects according to claim 6 , wherein the exposure comprises Laser or UV.
8. The method for manufacturing the metal interconnects according to claim 1 , further comprising at least a via hole formed under one of the plurality of trenches.
9. The method for manufacturing the metal interconnects according to claim 1 , further comprising a diffusion barrier layer formed under the seed layer.
10. The method for manufacturing the metal interconnects according to claim 1 , further comprising performing a planarization process to remove superfluous metal layer from the substrate to form a plurality of metal interconnects on the substrate.
11. A method for manufacturing metal interconnects, comprising:
providing a substrate comprising a dielectric layer formed thereon, and a plurality of trenches being formed in the dielectric layer;
masking the trenches to define a plurality of exposed regions on the dielectric layer;
performing a surface treatment to the exposed regions to form a plurality of rough surfaces on the exposed regions;
forming a seed layer on the substrate after the surface treatment, the seed layer comprising a plurality of rough surfaces respectively on the exposed regions; and
forming a metal layer on the substrate, and the trenches being filled up with the metal layer.
12. The method for manufacturing the metal interconnects according to claim 11 , further comprising forming a sacrificial layer respectively in the trenches before masking the trenches.
13. The method for manufacturing the metal interconnects according to claim 12 , wherein the surface treatment comprises an ion bombardment.
14. The method for manufacturing the metal interconnects according to claim 13 , wherein the ion bombardment comprises producing N, B, As, P, inert, or halogen ions.
15. The method for manufacturing the metal interconnects according to claim 14 , wherein the ion bombardment comprises providing halogen ions with lower energy.
16. The method for manufacturing the metal interconnects according to claim 11 , wherein the surface treatment comprises exposure to Laser or UV.
17. The method for manufacturing the metal interconnects according to claim 11 , further comprising at least a via hole formed under one of the plurality of trenches.
18. The method for manufacturing the metal interconnects according to claim 11 , further comprising a diffusion barrier layer formed under the seed layer.
19. The method for manufacturing the metal interconnects according to claim 18 , wherein the diffusion barrier layer comprises the rough surfaces.
20. The method for manufacturing the metal interconnects according to claim 11 , further comprising performing a planarization process to remove superfluous metal layer from the substrate to form a plurality of metal interconnects on the substrate.