Semiconductor device
A semiconductor device includes: a first domain including a first high power source line, a first low power source line, and a first power clamp circuit; a second domain including a second high power source line, a second low power source line, and a second power clamp circuit; a third power clamp circuit provided between the second high power source line and the first low power source line; a first relay circuit that receives a signal from the first domain and outputs the signal to the second domain; and a second relay circuit that receives a signal from the second domain and outputs the signal to the first domain, wherein the first relay circuit and the second relay circuit have a circuit portion that is connected to the second high power source line and the first low power source line.
1. A semiconductor device comprising:
a first domain that includes a first high power source line, a first low power source line, and a first power clamp circuit provided between the first high power source line and the first low power source line;
a second domain that include a second high power source line separated from the first high power source line, a second low power source line separated from the first low power source line, and a second power clamp circuit provided between the second high power source line and the second low power source line;
a third power clamp circuit provided between the second high power source line and the first low power source line;
a first relay circuit that receives a signal from the first domain and outputs the signal to the second domain; and
a second relay circuit that receives a signal from the second domain and outputs the signal to the first domain, wherein
the first relay circuit and the second relay circuit have a circuit portion that is connected to the second high power source line and the first low power source line,
wherein
the first relay circuit is a level shifter,
the first relay circuit includes a first complementary signal generation circuit that is connected to the first high power source line and the first low power source line, and that generates a complementary signal of a signal from the first domain, and
the first relay circuit includes a first differential circuit that is connected to the second high power source line and the first low power source line, that receives a complementary signal from the first complementary signal generation circuit, and that outputs a first output to the second domain.
2. The semiconductor device according to claim 1 , wherein
the first low power source line and the second low power source line are separated via a bidirectional diode.
3. The semiconductor device according to claim 1 , wherein
a voltage between the first high power source line and the first low power source line is set to a voltage lower than or equal to a voltage between the second high power source line and the second low power source line.
4. The semiconductor device according to claim 2 , wherein
the second relay circuit is a level shifter.
5. The semiconductor device according to claim 4 , wherein the second relay circuit includes:
a second complementary signal generation circuit that is connected to the second high power source line and the first low power source line, and that generates a complementary signal of a signal from the second domain; and
a second differential circuit that is connected to the first high power source line and the first low power source line, that receives a complementary signal from the second complementary signal generation circuit, and that outputs a second output to the first domain.
6. The semiconductor device according to claim 2 , wherein
a voltage between the first high power source line and the first low power source line is set to a voltage lower than or equal to a voltage between the second high power source line and the second low power source line.
7. The semiconductor device according to claim 3 , wherein
the second relay circuit is a level shifter.
8. The semiconductor device according to claim 1 , wherein
the second relay circuit is a level shifter.
9. The semiconductor device according to claim 7 , wherein the second relay circuit include:
a second complementary signal generation circuit that is connected to the second high power source line and the first low power source line, and that generates a complementary signal of a signal from the second domain; and
a second differential circuit that is connected to the first high power source line and the first low power source line, that receives a complementary signal from the second complementary signal generation circuit, and that outputs a second output to the first domain.
10. The semiconductor device according to claim 8 , wherein the second relay circuit includes:
a second complementary signal generation circuit that is connected to the second high power source line and the first low power source line, and that generates a complementary signal of a signal from the second domain; and
a second differential circuit that is connected to the first high power source line and the first low power source line, that receives a complementary signal from the second complementary signal generation circuit, and that outputs a second output to the first domain.
11. A semiconductor device comprising:
a first domain that includes a first high power source line, a first low power source line, and a first power clamp circuit provided between the first high power source line and the first low power source line;
a second domain that include a second high power source line separated from the first high power source line, a second low power source line separated from the first low power source line, and a second power clamp circuit provided between the second high power source line and the second low power source line;
a third power clamp circuit provided between the second high power source line and the first low power source line;
a first relay circuit that receives a signal from the first domain and outputs the signal to the second domain; and
a second relay circuit that receives a signal from the second domain and outputs the signal to the first domain, wherein
the first relay circuit and the second relay circuit have a circuit portion that is connected to the second high power source line and the first low power source line,
wherein
the second relay circuit is a level shifter,
the second relay circuit includes a second complementary signal generation circuit that is connected to the second high power source line and the first low power source line, and that generates a complementary signal of a signal from the second domain, and
the second relay circuit includes a differential circuit that is connected to the first high power source line and the first low power source line, that receives a complementary signal from the second complementary signal generation circuit, and that outputs an output to the first domain.
12. The semiconductor device according to claim 11 , wherein
the first low power source line and the second low power source line are separated via a bidirectional diode.
13. The semiconductor device according to claim 11 , wherein
a voltage between the first high power source line and the first low power source line is set to a voltage lower than or equal to a voltage between the second high power source line and the second low power source line.