Semiconductor light-emitting device

1. A semiconductor light-emitting device, comprising:

a light-emitting stack comprising a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;

a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength; and

a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and comprising a first insulating layer and a second insulating layer,

wherein the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more, the first insulating layer including SiO2 and having a thickness in a range of 2 nm to 70 nm, and the second insulating layer including TiO2 and having a thickness in a range of 105 nm to 135 nm, to increase transmittance of light emitted from the light-emitting stack and incident to the wavelength conversion layer and increase reflectance of light emitted from the wavelength conversion layer and incident to the light-emitting stack.

2. The semiconductor light-emitting device of claim 1 , wherein the refractive index of the first insulating layer is in a range of 1.4 to 1.8, and the refractive index of the second insulating layer is in a range of 2.2 to 2.5.

3. The semiconductor light-emitting device of claim 1 , wherein the first insulating layer is disposed on the light-emitting stack, and the second insulating layer is disposed on the first insulating layer.

4. The semiconductor light-emitting device of claim 1 , wherein the light control layer has a multilayer structure in which a plurality of first insulating layers and a plurality of second insulating layers are alternately and repeatedly stacked.

5. The semiconductor light-emitting device of claim 1 , wherein a light-emitting surface of the light-emitting stack comprises an uneven structure, and the light control layer is disposed on the uneven structure.

6. The semiconductor light-emitting device of claim 1 , further comprising a micro lens portion disposed between the light control layer and the wavelength conversion layer, the micro lens portion comprising protrusion portions that are convex toward the wavelength conversion layer.

7. The semiconductor light-emitting device of claim 6 , wherein a refractive index of the micro lens portion is higher than a refractive index of the wavelength conversion layer.

8. The semiconductor light-emitting device of claim 1 , further comprising a transparent electrode layer disposed on the first conductivity-type semiconductor layer,

wherein the light control layer is disposed on the transparent electrode layer.

9. A semiconductor light-emitting device, comprising:

a substrate comprising a first surface and a second surface facing opposite to the first surface;

a light-emitting stack disposed on the first surface of the substrate;

a wavelength conversion layer disposed on the second surface of the substrate and configured to convert at least some of light having a first wavelength, emitted from the light-emitting stack, into light having a second wavelength; and

a light control layer disposed between the substrate and the wavelength conversion layer, and comprising a first insulating layer and a second insulating layer,

wherein the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more, the first insulating layer including SiO 2 and having a thickness in a range of 2 nm to 70 nm, and the second insulating layer including TiO 2 and having a thickness in a range of 105 nm to 135 nm, to increase transmittance of light emitted from the light-emitting stack and incident to the wavelength conversion layer and increase reflectance of light emitted from the wavelength conversion layer and incident to the light-emitting stack.

10. The semiconductor light-emitting device of claim 9 , wherein the first insulating layer is in contact with the substrate.

11. The semiconductor light-emitting device of claim 9 , further comprising a micro lens portion disposed between the light control layer and the wavelength conversion layer, the micro lens comprising protrusion portions that are convex toward the wavelength conversion layer.

12. The semiconductor light-emitting device of claim 11 , wherein a refractive index of the micro lens portion is higher than a refractive index of the wavelength conversion layer.

13. The semiconductor light-emitting device of claim 9 , wherein the light-emitting stack comprises a light-emitting nanostructure in which a first conductivity-type semiconductor nanocore, an active layer and a second conductivity-type semiconductor layer are sequentially stacked.