IP Library › Granted Patent US 10,347,466
Granted Patent B2
US 10,347,466 · App. 15/173,241 · Granted Jul 9, 2019

Plasma processing apparatus

Inventors: Takahiro Hirano (Miyagi, JP); Toshihiko Iwao (Miyagi, JP)
Assignee: TOKYO ELECTRON LIMITED
H01J37/32238
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Quick Facts
Patent No.
US 10,347,466
App. No.
15/173,241
Granted
Jul 9, 2019
Kind
B2
Abstract

Disclosed is a plasma processing apparatus that includes a processing container configured to accommodate a wafer, and a dielectric window provided to hermetically seal an opening formed in a top portion of the processing container, and configured to transmit microwaves into the processing container. The dielectric window has a thickness of 3λ/8 or less (here, λ is a wavelength of the microwaves) at least at a predetermined position where a microwave power is concentrated, and a protrusion is formed at the predetermined position on a bottom surface of the dielectric window to protrude downward from the bottom surface.

Claims (17)

1. A plasma processing apparatus that performs a plasma processing on an object, the plasma processing apparatus comprising:

a processing container configured to accommodate the object, the processing container having at least one side wall;

a dielectric window provided to seal an opening formed in a top portion of the processing container, and configured to transmit microwaves into the processing container; and

a slot plate located on a top surface of the dielectric window, the slot plate having at least one slot to radiate microwaves to the dielectric window,

wherein the dielectric window has a thickness of 3λ/8 or less (here, λ is a wavelength of the microwaves) at least at a predetermined position where a microwave power is concentrated,

wherein the dielectric window comprises at least one protrusion located at the predetermined position on a bottom surface of the dielectric window, and each protrusion protrudes downward from the bottom surface,

wherein each protrusion is disposed at a position corresponding to a location of a respective slot, and

wherein none of the at least one protrusion is in contact with any of the at least one side wall.

2. The plasma processing apparatus of claim 1 , wherein the at least one slot comprises a plurality of slots to radiate microwaves to the dielectric window.

3. The plasma processing apparatus of claim 2 , wherein the predetermined position includes a position where an electron density becomes maximum within a plane of the dielectric window.

4. The plasma processing apparatus of claim 1 , wherein each protrusion has a width in a range of λ/8 to 3λ/8.

5. The plasma processing apparatus of claim 1 , wherein each protrusion has a height of λ/16 or more.

6. The plasma processing apparatus of claim 1 , wherein the at least one protrusion includes a plurality of protrusions provided on the bottom surface of the dielectric window.

7. The plasma processing apparatus of claim 2 , wherein the at least one protrusion includes a plurality of protrusions provided on the bottom surface of the dielectric window.

8. The plasma processing apparatus of claim 7 , wherein the plurality of protrusions are positioned along circles concentric to the slot plate with a predetermined interval in a radial direction.

9. The plasma processing apparatus of claim 1 , wherein each protrusion has a downwardly elongated rectangular cross-section when viewed from a side.

10. The plasma processing apparatus of claim 1 , wherein each protrusion is ring-shaped when viewed from below.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 3, 2016
From: HIRANO, TAKAHIRO; IWAO, TOSHIHIKO
To: TOKYO ELECTRON LIMITED
Reel/Frame 038803/0932 →
Priority Claims (1)
JP 2015-115434 · Jun 8, 2015 · national
Continuity (1)
Related Publication 20160358758A1 · Dec 8, 2016