IP Library › Granted Patent US 9,831,234
Granted Patent B2
US 9,831,234 · App. 15/173,244 · Granted Nov 28, 2017

Electro-static discharge protection devices having a low trigger voltage

Inventor: Hyun Duck Lee (Gyeonggi-do, KR)
Assignee: SK Hynix Inc.
H01L27/0262H01L29/7408
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,831,234
App. No.
15/173,244
Granted
Nov 28, 2017
Kind
B2
Abstract

An electro-static discharge (ESD) protection device includes a first PN diode, a second PN diode and a silicon controlled rectifier (SCR). The first PN diode and the second PN diode are coupled in series between a pad and a ground voltage to provide a first discharge current path. The SCR is coupled between the pad and the ground voltage to provide a second discharge current path. The SCR has a PNPN structure.

Claims (18)

1. An electro-static discharge (ESD) protection device comprising:

a first PN diode coupled between a pad and a first node;

a second PN diode coupled between a ground voltage and the first node to provide a first discharge current path between the pad and the ground voltage; and

a silicon controlled rectifier (SCR) coupled between the pad and the ground voltage to provide a second discharge current path between the pad and the ground voltage, and

wherein the first node is directly coupled to the SCR.

2. The ESD protection device of claim 1 ,

wherein an anode of the first PN diode is connected to the pad,

wherein a cathode of the second PN diode is connected to the ground voltage, and

wherein a cathode of the first PN diode is electrically connected to an anode of the second PN diode through the first node.

3. The ESD protection device of claim 2 , wherein the SCR includes:

an NPN bipolar junction transistor having a collector connected to the first node, a base connected to a second node, and an emitter connected to the ground voltage; and

a PNP bipolar junction transistor having an emitter connected to the pad, a base connected to the first node, and a collector connected to the second node.

4. The ESD protection device of claim 3 , further comprising a resistive element coupled between the first and second nodes.

5. The ESD protection device of claim 1 , further comprising a third PN diode and a fourth PN diode that are coupled in series between the pad and the ground voltage to provide a third discharge current path.

6. The ESD protection device of claim 5 ,

wherein an anode of the third PN diode is connected to the pad,

wherein a cathode of the fourth PN diode is connected to the ground voltage, and

wherein a cathode of the third PN diode is electrically connected to an anode of the fourth PN diode through the first node.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 3, 2016
From: LEE, HYUN DUCK
To: SK HYNIX INC.
Reel/Frame 038882/0790 →
Priority Claims (1)
KR 10-2015-0183287 · Dec 21, 2015 · national
Continuity (1)
Related Publication 20170179110A1 · Jun 22, 2017