IP Library Granted Patent US 9,826,178
Granted Patent B2
US 9,826,178 · App. 15/174,506 · Granted Nov 21, 2017

Logarithmic pixels with correlated double sampling

Inventor: Jeffery Beck (Philomath, OR)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H04N5/3575H04N5/3577H04N5/3592H04N5/35518H04N5/365H04N5/378
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Quick Facts
Patent No.
US 9,826,178
App. No.
15/174,506
Granted
Nov 21, 2017
Kind
B2
Abstract

An imaging pixel may be operated in either a linear mode or a logarithmic mode. In the logarithmic mode, the voltage at a floating diffusion region may be proportional to the logarithm of the intensity of incident light. In order to enable correlated double sampling (CDS) in the logarithmic mode, a transistor may be provided that couples the photodiode to a bias voltage. When the transistor is turned off, the photodiode may be able to operate in a logarithmic mode. When the transistor is turned on, the floating diffusion region may be reset to a baseline voltage level. Images from the linear mode and the logarithmic mode may be combined to form high dynamic range images with flicker mitigation.

Claims (34)

1. A method of operating an imaging pixel, wherein the imaging pixel comprises a photodiode, an anti-blooming transistor coupled between the photodiode and a first bias voltage, a transfer transistor coupled between the photodiode and a floating diffusion region, and a control transistor coupled between the floating diffusion region and a second bias voltage, the method comprising:

disabling the anti-blooming transistor;

asserting the transfer transistor;

asserting the control transistor;

after disabling the anti-blooming transistor and asserting the control transistor, sampling a first voltage level at the floating diffusion region, wherein sampling the first voltage level comprises sampling the first voltage level while the anti-blooming transistor is disabled, the control transistor is asserted, and the transfer transistor is asserted;

after sampling the first voltage level at the floating diffusion region, asserting the anti-blooming transistor; and

after asserting the anti-blooming transistor, sampling a second voltage level at the floating diffusion region, wherein sampling the second voltage level at the floating diffusion region comprises sampling the second voltage level while the anti-blooming transistor is asserted, the control transistor is asserted, and the transfer transistor is asserted.

2. The method defined in claim 1 , wherein asserting the anti-blooming transistor results in charge generated in the photodiode flowing through the anti-blooming transistor and exiting the imaging pixel.

3. The method defined in claim 1 , wherein disabling the anti-blooming transistor, asserting the control transistor, and asserting the transfer transistor results in the floating diffusion region having a logarithmic response to incident light.

4. The method defined in claim 1 , wherein disabling the anti-blooming transistor, asserting the control transistor, and asserting the transfer transistor results in a photocurrent flowing through the control and transfer transistors.

5. The method defined in claim 1 , further comprising:

with processing circuitry, subtracting the sample of the second voltage level from the sample of the first voltage level.

6. The method defined in claim 1 , wherein operating the imaging pixel comprises operating the imaging pixel in a logarithmic mode.

7. A method of operating an imaging pixel in a logarithmic mode, wherein the imaging pixel comprises a photodiode, a floating diffusion region, an anti-blooming transistor coupled between the photodiode and a first bias voltage, a transfer transistor coupled between the photodiode and the floating diffusion region, and a control transistor coupled between the floating diffusion region and a second bias voltage, the method comprising:

sampling a first voltage level at the floating diffusion region while the anti-blooming transistor is disabled, the transfer transistor is asserted, and the control transistor is asserted; and

sampling a second voltage level at the floating diffusion region while the anti-blooming transistor is asserted, the transfer transistor is asserted, and the control transistor is asserted.

8. The method defined in claim 7 , the method further comprising:

with processing circuitry, subtracting the sample of the second voltage level from the sample of the first voltage level.

9. The method defined in claim 7 , wherein a gate of the control transistor receives the second bias voltage when the control transistor is asserted.

10. A method of operating an imaging pixel with a photodiode, a floating diffusion region, an anti-blooming transistor coupled between the photodiode and a first bias voltage, a transfer transistor coupled between the photodiode and the floating diffusion region, and a control transistor coupled between the floating diffusion region and a second bias voltage, the method comprising:

capturing a first image using correlated double sampling while the imaging pixel operates in a linear mode, wherein capturing the first image using correlated double sampling while the imaging pixel operates in the linear mode comprises:

disabling the control transistor;

asserting the anti-blooming transistor to reset the photodiode and begin an integration time;

while the transfer transistor is disabled, asserting the control transistor to reset the floating diffusion region to a first voltage;

sampling the first voltage while the transfer transistor, anti-blooming transistor, and control transistors are disabled;

asserting the transfer transistor to end the integration time and transfer charge from the photodiode to the floating diffusion region;

after asserting the transfer transistor to end the integration time and transfer charge from the photodiode to the floating diffusion region, sampling a second voltage while the transfer transistor, anti-blooming transistor, and control transistors are disabled; and

with processing circuitry, subtracting the sample of the first voltage level from the sample of the first second level; and

capturing a second image using correlated double sampling while the imaging pixel operates in a logarithmic mode, wherein capturing the second image using correlated double sampling while the imaging pixel operates in the logarithmic mode comprises:

sampling a third voltage level at the floating diffusion region while the anti-blooming transistor is disabled, the transfer transistor is asserted, and the control transistor is asserted;

sampling a fourth voltage level at the floating diffusion region while the anti-blooming transistor is asserted, the transfer transistor is asserted, and the control transistor is asserted; and

with the processing circuitry, subtracting the sample of the fourth voltage level from the sample of the third voltage level.

11. The method defined in claim 10 , further comprising:

using the first and second captured images to form a high dynamic range image with flicker mitigation.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 041187, FRAME 0295 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064151/0203 →
SECURITY INTEREST Recorded Dec 23, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 041187/0295 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 6, 2016
From: BECK, JEFFERY
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 038820/0675 →
Continuity (2)
Provisional Application 62298120 · Feb 22, 2016
Related Publication 20170244917A1 · Aug 24, 2017