IP Library Granted Patent US 10,269,847
Granted Patent B2
US 10,269,847 · App. 15/174,676 · Granted Apr 23, 2019

Methods of forming imaging pixel microlenses

Inventor: Christopher Parks (Pittsford, NY)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L27/14627H01L27/1462H01L27/14625H01L27/14685H01L27/14689H01L31/02162H01L31/02327
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Quick Facts
Patent No.
US 10,269,847
App. No.
15/174,676
Granted
Apr 23, 2019
Kind
B2
Abstract

A method of forming a microlens may include using two layers of photoresist. The first photoresist layer may be patterned to form a first portion of a pixel microlens. A second photoresist layer may be patterned on top of the first portion of the pixel microlens. The second photoresist may then be melted so that the second photoresist layer has a curved upper surface. The first and second photoresist layers may combine to form the pixel microlens. The indices of refraction of the first and second photoresist layers may the same or different. The melting point of the second photoresist may be lower than the melting point of the first photoresist.

Claims (26)

1. A method of forming a microlens, the method comprising:

patterning a first photoresist to form a first portion of the microlens, wherein the first portion of the microlens has a concave curved upper surface;

forming a second photoresist on the first portion of the microlens, wherein the second photoresist has a melting point; and

reflowing the second photoresist so that the second photoresist forms a second portion of the microlens, wherein reflowing the second photoresist comprises heating the second photoresist past the melting point and wherein the second portion of the microlens has a convex curved upper surface and a convex curved lower surface that is adjacent to the concave curved upper surface of the first portion of the microlens.

2. The method defined in claim 1 , further comprising:

before patterning the first photoresist, forming the first photoresist on a substrate.

3. The method defined in claim 1 , further comprising:

after forming the second photoresist on the first portion of the microlens, patterning the second photoresist.

4. The method defined in claim 3 , wherein patterning the second photoresist comprises selectively exposing the second photoresist to light.

5. The method defined in claim 1 , wherein the first photoresist has a first index of refraction, wherein the second photoresist has a second index of refraction, and wherein the first index of refraction is different than the second index of refraction.

6. The method defined in claim 1 , wherein the first photoresist has a first index of refraction, wherein the second photoresist has a second index of refraction, and wherein the first index of refraction is the same as the second index of refraction.

7. The method defined in claim 1 , wherein the melting point is a second melting point, wherein the first photoresist has a first melting point, and wherein the first melting point is higher than the second melting point.

8. The method defined in claim 1 , wherein the first portion of the microlens has curved side surfaces.

9. The method defined in claim 1 , wherein the microlens has a thickness greater than two microns.

10. A method comprising:

forming a first photoresist layer over an image sensor, wherein the image sensor has a plurality of photosensitive areas;

patterning the first photoresist layer so that there are a plurality of patterned first photoresist portions, wherein each patterned first photoresist portion covers a respective photosensitive area and has a respective non-planar upper surface and wherein the respective non-planar upper surface of each patterned first photoresist portion is a respective concave curved upper surface;

forming a second photoresist layer over the first photoresist layer, wherein the second photoresist layer has a melting point;

patterning the second photoresist layer so that there are a plurality of patterned second photoresist portions, wherein each patterned second photoresist portion covers a respective patterned first photoresist portion; and

heating the plurality of patterned second photoresist portions past the melting point so that the patterned second photoresist portions melt, wherein each of the melted patterned second photoresist portions has a respective convex curved upper surface and a respective convex curved lower surface adjacent to the respective concave curved upper surface of its respective patterned first photoresist portion.

11. The method defined in claim 10 , wherein the melting point is a second melting point, wherein the first photoresist layer has a first melting point, and wherein the second melting point is lower than the first melting point.

12. A method of forming a microlens over an imaging pixel, the method comprising:

using photolithography to pattern a first photoresist to form a first portion of the microlens, wherein the first portion of the microlens has an upper surface and wherein the upper surface of the first portion of the microlens is concave;

using photolithography to pattern a second photoresist to form a patterned photoresist portion on the upper surface of the first portion of the microlens, wherein the patterned photoresist portion has a planar upper surface; and

reflowing the patterned photoresist portion by exposing the patterned photoresist portion to heat so that the patterned photoresist portion forms a second portion of the microlens having a convex curved upper surface, wherein the second portion of the microlens has a convex curved lower surface adjacent to the concave upper surface of the first portion of the microlens.

13. The method defined in claim 12 , wherein reflowing the patterned photoresist portion by exposing the patterned photoresist portion to heat so that the patterned photoresist portion forms the curved upper surface comprises exposing the patterned photoresist portion to heat so that the patterned photoresist portion transitions from a solid to a liquid.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 041187, FRAME 0295 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064151/0203 →
SECURITY INTEREST Recorded Dec 23, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 041187/0295 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 6, 2016
From: PARKS, CHRISTOPHER
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 038821/0379 →
Continuity (2)
Provisional Application 62299628 · Feb 25, 2016
Related Publication 20170250218A1 · Aug 31, 2017