Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

1. A method of manufacturing a semiconductor device, comprising:

(a) forming a seed layer containing a predetermined element on a substrate by performing a process multiple times, the process including performing:

(a-1) supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and

(a-2) supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor, thereby lowering concentration of the at least one of carbon or nitrogen from the adsorption layer; and

(b) supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer,

wherein (a-1) and (a-2) are alternately performed in (a), and

wherein a pressure at a space where the substrate is located in (a-1) is set higher than a pressure at a space where the substrate is located in (a-2).

2. The method of claim 1 , wherein a pressure at a space where the substrate is located in (a-1) is set higher than a pressure at a space where the substrate is located in (b).

3. The method of claim 1 , wherein a supply flow rate of the first precursor in (a-1) is set higher than an exhaust flow rate of the first precursor exhausted from a space where the substrate is located in (a-1).

4. The method of claim 1 , wherein in (a-1), the first precursor is exhausted from a space where the substrate is located while supplying the first precursor into the space, and at this time, a supply flow rate of the first precursor supplied into the space is set higher than an exhaust flow rate of the first precursor exhausted from the space.

5. The method of claim 1 , wherein in (a-1), an exhaust of the first precursor from a space where the substrate is located is stopped.

6. The method of claim 1 , wherein the ligand desorption material includes a reducing gas.

7. The method of claim 1 , wherein the ligand desorption material includes a plasma-excited reducing gas.

8. The method of claim 1 , wherein the ligand desorption material includes a non-plasma-excited reducing gas.

9. The method of claim 1 , wherein the ligand desorption material includes a plasma-excited gas.

10. The method of claim 1 , wherein the ligand desorption material includes a plasma-excited hydrogen-containing gas.

11. The method of claim 1 , wherein the ligand desorption material includes a plasma-excited inert gas.

12. The method of claim 1 , wherein the ligand desorption material includes a plasma-excited inert gas and a non-plasma-excited reducing gas.

13. The method of claim 1 , wherein the ligand desorption material includes a halogen-element-containing gas.

14. The method of claim 1 , wherein (a-1) is performed under a condition in which the first precursor is not pyrolyzed, and (b) is performed under a condition in which the second precursor is pyrolyzed.

15. The method of claim 1 , wherein an insulation film is formed on a surface of the substrate, and the seed layer is formed on the insulation film.