IP Library › Granted Patent US 10,319,955
Granted Patent B2
US 10,319,955 · App. 15/176,350 · Granted Jun 11, 2019

Power storage device and electronic device

Inventor: Kosei Noda (Mie, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01M2/026H01M2/0207H01M2/0275H01M2/0287H01M2/06H01M10/0436H01M2/0212H01M10/0459H01M2220/30
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Quick Facts
Patent No.
US 10,319,955
App. No.
15/176,350
Granted
Jun 11, 2019
Kind
B2
Abstract

A power storage device with high capacity per unit volume, a flexible power storage device with a novel structure, a repeatedly bendable power storage device, a highly reliable power storage device, or a long-life power storage device is provided. The power storage device includes an inner structure and an exterior body surrounding the inner structure. The inner structure includes a positive electrode and a negative electrode. The exterior body includes a first film containing titanium and one or more elements selected from niobium, tantalum, vanadium, zirconium, and hafnium. It is preferable that the first film further contain one or more elements selected from molybdenum, chromium, and aluminum.

Claims (51)

1. A power storage device comprising:

an inner structure; and

an exterior body surrounding the inner structure,

wherein the inner structure comprises a positive electrode and a negative electrode, and

wherein the exterior body comprises a first film containing an alloy comprising one of Ti—Nb—Ta—Zr—O and Ti—Ta—Nb—V—Zr—O.

2. The power storage device according to claim 1 , further comprising an electrolytic solution surrounded by the exterior body.

3. The power storage device according to claim 1 , wherein the first film further contains one or more elements selected from molybdenum, chromium, and aluminum.

4. The power storage device according to claim 1 , wherein the first film comprises a region with a thickness of more than or equal to 10 μm and less than or equal to 150 μm.

5. The power storage device according to claim 1 , wherein the first film comprises a region with a density of more than or equal to 5 g/cm 3 and less than or equal to 6 g/cm 3 .

6. The power storage device according to claim 1 ,

wherein the exterior body further comprises a second film in contact with the first film, and

wherein the second film contains an organic material.

7. The power storage device according to claim 6 ,

wherein the exterior body further comprises a third film in contact with the first film,

wherein the third film contains an organic material, and

wherein the first film is between the second film and the third film.

8. The power storage device according to claim 1 , wherein the exterior body is flexible.

9. An electronic device comprising:

the power storage device according to claim 1 ;

a display; and

an operation button.

10. A power storage device comprising:

an inner structure; and

an exterior body surrounding the inner structure,

wherein the inner structure comprises a plurality of stacks, and

wherein the exterior body comprises a first film containing an alloy comprising one of Ti—Nb—Ta—Zr—O and Ti—Ta—Nb—V—Zr—O.

11. The power storage device according to claim 10 , wherein each stack includes a negative electrode current collector, a negative electrode active material layer, a separator, a positive electrode active material layer, and a positive electrode current collector.

12. The power storage device according to claim 10 , further comprising an electrolytic solution surrounded by the exterior body.

13. The power storage device according to claim 10 , wherein the first film further contains one or more elements selected from molybdenum, chromium, and aluminum.

14. The power storage device according to claim 10 , wherein the first film comprises a region with a thickness of more than or equal to 10 μm and less than or equal to 150 μm.

15. The power storage device according to claim 10 , wherein the first film comprises a region with a density of more than or equal to 5 g/cm 3 and less than or equal to 6 g/cm 3 .

16. The power storage device according to claim 10 ,

wherein the exterior body further comprises a second film in contact with the first film, and

wherein the second film contains an organic material.

17. The power storage device according to claim 16 ,

wherein the exterior body further comprises a third film in contact with the first film,

wherein the third film contains an organic material, and

wherein the first film is between the second film and the third film.

18. The power storage device according to claim 10 , wherein the exterior body is flexible.

19. An electronic device comprising:

the power storage device according to claim 10 ;

a display; and

an operation button.

20. The power storage device according to claim 1 ,

wherein the exterior body further comprises a flexible thin film in contact with the first film, and

wherein the flexible thin film comprises at least one of aluminum, stainless steel, copper, nickel, and a graphene compound.

21. The power storage device according to claim 1 , wherein the power storage device is flexible.

22. The power storage device according to claim 10 ,

wherein the exterior body further comprises a flexible thin film in contact with the first film, and

wherein the flexible thin film comprises at least one of aluminum, stainless steel, copper, nickel, and a graphene compound.

23. The power storage device according to claim 10 , wherein the power storage device is flexible.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 8, 2016
From: NODA, KOSEI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 039679/0790 →
Priority Claims (1)
JP 2015-120997 · Jun 16, 2015 · national
Continuity (1)
Related Publication 20160372717A1 · Dec 22, 2016