Method of forming a semiconductor device

1. A method of forming a semiconductor device comprising:

providing a semiconductor substrate of a first conductivity type;

forming a first doped region of a second conductivity type on the semiconductor substrate;

forming a second doped region of the first conductivity type overlying the first doped region the second doped region having a first surface that is opposite to the first doped region;

forming a third doped region having the second conductivity type on the first surface of the second doped region;

forming a fourth doped region of the first conductivity type in the third doped region;

forming one or more gate structures extending through the fourth doped region;

forming a plurality of termination trenches extending through the third doped region and into the first doped region wherein the plurality of termination trenches surround the first, second, third, and fourth doped regions and the one or more gate structures; and

removing a portion of the semiconductor substrate to expose the first doped region.

2. The method of claim 1 wherein removing the portion of the semiconductor substrate includes one of,

a) removing the portion of the semiconductor substrate using one of chemical-mechanical polishing, or grinding, or dry etching to perform the removing wherein the plurality of termination trenches provide a removal stop signal that identifies substantially exposing ends of the plurality of termination trenches, or

b) etching the semiconductor substrate with a wet chemical etch wherein the etching substantially stops upon exposing the first doped region.

3. The method of claim 1 further including forming a conductor material on the first doped region.

4. The method of claim 1 wherein forming the plurality of termination trenches includes forming at least one termination trench of the plurality of termination trenches abutting the first doped region and the third doped region.

5. The method of claim 1 wherein forming the plurality of termination trenches includes forming one or more of the termination trenches in a termination region of the semiconductor device and forming the one or more gate structures in an active region of the semiconductor device.

6. A method of forming a semiconductor device comprising:

providing a semiconductor substrate of a first conductivity type;

forming a first doped region of a second conductivity type on the semiconductor substrate;

forming a second doped region of the first conductivity type overlying the first doped region the second doped region having a first surface that is opposite to the first doped region;

forming a third doped region having the second conductivity type on the first surface of the second doped region;

forming a fourth doped region of the first conductivity type in the third doped region;

forming a plurality of termination trenches extending through the third doped region and into the first doped region wherein the plurality of termination trenches surround the first, second, third, and fourth doped regions including,

forming a plurality of first trench opening in a termination region of the semiconductor device wherein a first semiconductor material is disposed between the plurality of first trench opening,

forming a first insulator along sidewalls and a bottom of each first trench opening,

forming a cap on top of the plurality of first trench openings thereby closing the top of each first trench opening and leaving a first space in an interior of each first termination trench of the plurality of termination trenches,

removing the first semiconductor material to form a plurality of second trench openings disposed between each first termination trench, and

forming a third insulator on sidewalls and a bottom of each second trench opening and leaving a second space in an interior of each second termination trench of the plurality of termination trenches; and

removing a portion of the semiconductor substrate to expose the first doped region.