Multi time programmable memories using local implantation in high-K/ metal gate technologies

1. A metal oxide semiconductor field effect transistor (MOSFET) memory array, comprising:

a complementary metal oxide semiconductor (CMOS) cell including an n-type MOSFET having a modified gate dielectric layer, wherein the modified gate dielectric layer is a high-k metal oxide; and

an n-type or p-type MOSFET having an unmodified gate dielectric layer, wherein the modified gate dielectric layer incorporates an oxygen scavenging species that changes a number of charge carriers that can be trapped in the modified gate dielectric layer compared to the unmodified gate dielectric layer.

2. The MOSFET memory array of claim 1 , wherein the high-k metal oxide is hafnium oxide.

3. The MOSFET memory array of claim 1 , wherein the oxygen scavenging species is selected from the group consisting of aluminum, (Al), beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), scandium (Sc), yttrium (Y), lanthanum (La), zirconium (Zr), hafnium (Hf), dysprosium (Dy), lutetium (Lu), erbium (Er), praseodymium (Pr), cesium (Ce), and combinations thereof.

4. The MOSFET memory array of claim 1 , wherein the modified gate dielectric layer has a greater density of oxygen vacancies than the unmodified gate dielectric layer.

5. The MOSFET memory array of claim 1 , Wherein the MOSFET having a modified gate dielectric layer includes a source region, a drain region and a channel region between the source region and drain region, the modified gate dielectric layer on the channel region, and a work function layer on the modified gate dielectric layer.

6. The MOSFET memory array of claim 5 , wherein the work function layer is a conductive nitride.

7. The MOSFET memory array of claim 5 , wherein a gate metal layer is on the work function layer forming a gate stack of the MOSFET having the modified gate dielectric layer.

8. The MOSFET memory array of claim 7 , wherein the MOSFET memory array includes a plurality of word lines, and the gate stack of the MOSFET having the modified gate dielectric layer, and a gate stack of the MOSFET having the unmodified gate dielectric layer forming a twin MOSFET cell are electrically connected to the same word line of the MOSFET memory array.

9. The MOSFET memory array of claim 7 , wherein the MOSFET having the modified gate dielectric layer is configured to have a first threshold voltage, Vt, and a second threshold voltage V t +ΔV t .

10. A modified metal oxide semiconductor field effect transistor (MOSFET), comprising:

a substrate including a channel region;

a gate stack including a gate dielectric layer, a work function layer, and a gate metal layer, wherein the gate dielectric layer includes an oxygen scavenging species that increases the number of oxygen vacancies in the gate dielectric layer to increase a number of charge carriers that can be trapped in the modified gate dielectric layer, wherein the modified gate dielectric layer is a high-k metal oxide.

11. The modified MOSFET of claim 10 , wherein the work function layer is a conductive nitride directly in contact with the gate dielectric layer.

12. The modified MOSFET of claim 10 , wherein the gate dielectric layer is hafnium oxide incorporating an oxygen scavenging species selected from the group consisting of aluminum, (Al), beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), scandium (Sc), yttrium (Y), lanthanum (La), zirconium (Zr), hafnium (Hf), dysprosium (Dy), lutetium (Lu), erbium (Er), praseodymium (Pr), cesium (Ce), and combinations thereof.

13. A modified metal oxide semiconductor field effect transistors (MOSFET), comprising:

a source region, a drain region, and a channel region in a substrate;

a gate dielectric layer on the channel region, wherein the gate dielectric layer is a high-k metal oxide;

a work function layer on the gate dielectric layer;

a gate metal layer on the work function layer; and

an oxygen scavenging species in the gate dielectric layer that increases that number of oxygen vacancies in the gate dielectric layer to increase the number of charge carriers that can be trapped in the modified gate dielectric layer.

14. The MOSFET of claim 13 , wherein the oxygen scavenging species is selected from the group consisting of aluminum, (Al), beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), scandium (Sc), yttrium (Y), lanthanum (La), zirconium (Zr), hafnium (Hf), dysprosium (Dy), lutetium (Lu), erbium (Er), praseodymium (Pr), cesium (Ce), and combinations thereof.

15. The MOSFET of claim 13 , wherein the gate dielectric layer is hafnium oxide.

16. The MOSFET of claim 13 , further comprising a word line electrically connected to the gate metal layer.