Semiconductor device and lead frame therefor

1. A semiconductor device, comprising:

a semiconductor die having a first side and an opposite second side, the semiconductor die comprising a first terminal on the first side and at least two second terminals on the second side; and

a lead frame comprising:

first and second base parts that are electrically and mechanically spaced from each other, wherein the second side of the semiconductor die is mounted to the lead frame so that the at least two second terminals are electrically connected, respectively, to the first and second base parts; and

the first base part having only one first protrusion that projects past a side of the semiconductor die and provides a first terminal surface that is co-planar with the first terminal on the first side of the semiconductor die,

the second base part having only one second protrusion that projects past a side of the semiconductor die and provides a second terminal surface that is co-planar with the first terminal on the first side of the semiconductor die,

wherein the first and second protrusions are substantially the same size.

2. The semiconductor device of claim 1 , wherein each of the at least two second terminals include an area, and wherein the areas of the at least two second terminals are different.

3. The semiconductor device of claim 2 , wherein each of the first and second base parts of the lead frame have an area corresponding to the area of the respectively connected second terminal.

4. The semiconductor device of claim 1 , wherein the semiconductor device has a top surface and a bottom surface, and wherein the first side of the semiconductor die, the first protrusion, and the second protrusion are exposed on the bottom surface.

5. The semiconductor device of claim 4 , wherein the first and second base parts of the lead frame respectively have exposed surfaces on the top surface of the semiconductor device.

6. The semiconductor device of claim 5 , wherein the first and second protrusions have exposed parts on a lateral side of the semiconductor device.

7. The semiconductor device of claim 1 , wherein the first and second protrusions extend perpendicularly from the first and second base parts.

8. The semiconductor device of claim 1 , wherein the semiconductor die comprises a VDMOS, a gate of the VDMOS is connected to a first one of the second terminals, a source of the VDMOS is connected to a second one of the second terminals, and a drain of the VDMOS is connected to the first terminal.

9. The semiconductor device of claim 1 , further comprising a molding compound that at least partially encapsulates the semiconductor die.

10. A semiconductor device, comprising:

a semiconductor die comprising a first terminal on a first side and at least two second terminals on an opposite second side; and

a lead frame comprising a first part and a second part, each of the first and second parts consisting of a base and a protrusion, wherein the protrusions are respectively connected to and protrude from first sides of the bases, wherein the protrusions have a height that is substantially equal to a thickness of the semiconductor die, so that when the semiconductor die is mounted on the lead frame with the second side of the die facing the bases of the first and second parts of the lead frame, then the first side of the die is co-planar with distal ends of the protrusions, and wherein the protrusions are substantially the same size.

11. The semiconductor device of claim 10 , wherein each of the bases of the first part and the second part of the lead frame is connected to a corresponding one of the two second terminals of the semiconductor die.

12. The semiconductor device of claim 10 , wherein the distal ends of the protrusions and the first terminal are exposed on a bottom surface of the semiconductor device.

13. The semiconductor device of claim 10 , wherein each of the bases of the first and second parts have second sides opposite to the first sides, wherein the second sides are exposed on a top surface of the semiconductor device.

14. The semiconductor device of claim 10 , wherein sidewalls of the protrusions are exposed on a lateral sidewall of the semiconductor device.

15. The semiconductor device of claim 10 , further comprising a molding compound that at least partially encapsulates the semiconductor die.

16. Lead frames comprising multiple lead frame units arranged in a matrix, wherein each lead frame unit comprises:

a first part consisting of a first branch and a second branch, wherein the second branch is connected to and extends from the first branch;

a second part consisting of a third branch and a fourth branch, wherein the fourth branch is connected to and extends from the third branch;

a first connection bar configured for connecting the first branch of the first part to the third branch of the second part of a neighboring lead frame unit; and

second connection bars configured for connecting the first branch of the first part to the second and fourth branches respectively of the first and second parts of another neighboring lead frame unit,

wherein the second branch of the first part and the fourth branch of the second part are substantially the same size and extend in the same direction and to the same height.

17. The lead frames of claim 16 , wherein the first and second connection bars are removable such that the first and second parts of each lead frame unit are electrically and mechanically separable.

18. The lead frames of claim 16 , wherein the first branch of the first part has an area that is different from an area of the third branch of the second part.

19. The lead frames of claim 16 , wherein the each of the second and fourth branches protrudes perpendicularly from a side of the corresponding first and third branch.