Cleaning composition for photolithography and method of forming photoresist pattern using the same
Disclosed are a cleaning composition for photolithography and a method of forming a photoresist pattern using the same. The cleaning composition, necessary for forming a photoresist pattern having a high aspect ratio, includes water and a compound represented by Chemical Formula 1 below: wherein R is H or OH, x is an integer selected from 1 to 100, y is an integer selected from 0 to 100, and z is an integer selected from 0 to 100. This cleaning composition is useful for forming a pattern using any of a variety of light sources, and also, even when it is difficult to form a fine pattern as desired using a photoresist alone, a fine pattern can be realized at a desired level of fineness and production costs can be reduced.
1. A cleaning composition for photolithography, suitable for preventing a photoresist pattern from collapsing, the cleaning composition comprising:
a compound of the following, Chemical Formula 1:
wherein R is H or OH,
x is 12,
y is 7 or 9, and
z is 0 or 1;
a water-soluble organic solvent;
an ammonium hydroxide; and
dionized water,
wherein the compound of Chemical Formula 1 of is contained in an amount of 1 to 1,000 ppm,
the water-soluble organic solvent is isopropyl alcohol, and
the ammonium hydroxide is tetrabutyl ammonium hydroxide.
2. The cleaning composition of claim 1 , wherein the cleaning composition comprises 0.01 wt % of the compound of Chemical Formula 1, 1 wt % of isopropyl alcohol, 0.01 wt % of tetrabutyl ammonium hydroxide, and 98.98 wt % of deionized water.
3. A method of forming a photoresist pattern, comprising:
(a) applying a photoresist on a semiconductor substrate to form a photoresist film;
(b) subjecting the photoresist film to exposure and development, thus forming a photoresist pattern; and
(c) cleaning the photoresist pattern using the cleaning composition of claim 1 , in order to prevent the photoresist pattern from collapsing.
4. The method of claim 3 , wherein the subjecting the photoresist film to exposure is performed using an exposure source selected from the group consisting of KrF, ArF and EUV.
5. The method of claim 3 , wherein the cleaning of the photoresist pattern is performed using the cleaning composition comprising 0.01 wt % of the compound of Chemical Formula 1, 1 wt % of isopropyl alcohol, 0.01 wt % of tetrabutyl ammonium hydroxide, and 98.98 wt % of deionized water.