IP Library Granted Patent US 9,853,000
Granted Patent B2
US 9,853,000 · App. 15/181,861 · Granted Dec 26, 2017

Warpage reduction in structures with electrical circuitry

Inventor: Cyprian Emeka Uzoh (San Jose, CA)
Assignee: Invensas Corporation
H01L23/562H01L21/32051H01L21/78H01L22/12H01L24/03H01L24/05H01L24/06H01L2224/0345H01L2224/05124H01L2224/05181H01L2924/12042
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Quick Facts
Patent No.
US 9,853,000
App. No.
15/181,861
Granted
Dec 26, 2017
Kind
B2
Abstract

To reduce warpage in at least one area of a wafer, a stress/warpage management layer ( 810 ) is formed to over-balance and change the direction of the existing warpage. For example, if the middle of the area was bulging up relative to the area's boundary, the middle of the area may become bulging downward, or vice versa. Then the stress/warpage management layer is processed to reduce the over-balancing. For example, the stress/management layer can be debonded from the wafer at selected locations, or recesses can be formed in the layer, or phase changes can be induced in the layer. In other embodiments, this layer is tantalum-aluminum that may or may not over-balance the warpage; this layer is believed to reduce warpage due to crystal-phase-dependent stresses which dynamically adjust to temperature changes so as to reduce the warpage (possibly keeping the wafer flat through thermal cycling). Other features are also provided.

Claims (41)

1. A structure comprising:

an integrated circuit; and

a first layer covering a first area of the integrated circuit and not being part of any circuitry, the first layer being bonded to the entire first area except at one or more selected locations within the first area, the first layer reducing a warpage of the integrated circuit in the first area and being sufficient to over-balance the warpage of the first area if bonded to the entire first area.

2. The structure of claim 1 wherein the first layer over-balances the warpage of the first area.

3. The structure of claim 1 wherein at any location at which the first layer is bonded to the first area, the first layer is debondable from the first area by electromagnetic radiation without debonding the first layer from the first area at any other location at which the first layer is bonded to the first area.

4. The structure of claim 1 wherein at any location at which the first layer is bonded to the first area, the first layer is debondable from the first area by heat without debonding the first layer from the first area at any other location at which the first layer is bonded to the first area.

5. The structure of claim 1 wherein the first layer comprises a first sub-layer and a second sub-layer;

wherein at each location at which the first layer is bonded to the first area, the second sub-layer comprises an adhesive bonding the first layer to the first area and having a different composition than the first sub-layer; and

at each location at which the first layer is not bonded to the first area, the second sub-layer comprises a composition obtainable from the adhesive by application of electromagnetic radiation.

6. The structure of claim 5 wherein the first layer is present in the final structure.

7. The structure of claim 1 wherein the first layer comprises a first sub-layer and a second sub-layer;

wherein at each location at which the first layer is bonded to the first area, the second sub-layer comprises an adhesive bonding the first layer to the first area and having a different composition than the first sub-layer; and

at each location at which the first layer is not bonded to the first area, the second sub-layer comprises a composition obtainable from the adhesive by application of heat.

8. The structure of claim 1 wherein:

at each location at which the first layer is bonded to the first area, the first layer comprises an adhesive bonded to the first area, the adhesive being debondable by application of electromagnetic radiation; and

at each location at which the first layer is not bonded to the first area, the first layer comprises a composition obtainable from the adhesive by application of electromagnetic radiation.

9. The structure of claim 1 wherein:

at each location at which the first layer is bonded to the first area, the first layer comprises an adhesive bonded to the first area, the adhesive being debondable by application of heat; and

at each location at which the first layer is not bonded to the first area, the first layer comprises a composition obtainable from the adhesive by application of heat.

10. The structure of claim 1 wherein the first area is an entire area of the integrated circuit.

11. The structure of claim 1 wherein the first layer is present in the final structure.

12. An assembly comprising:

an integrated circuit comprising one or more contact pads on a first side of the integrated circuit;

circuitry connected to the one or more contact pads of the integrated circuit; and

a first layer covering a first area on a second side of the integrated circuit, the first layer not being part of any circuitry, the first layer being bonded to the entire first area except at one or more selected locations within the first area, the first layer reducing a warpage of the first area.

13. The structure of claim 12 wherein at any location at which the first layer is bonded to the first area, the first layer is debondable from the first area by electromagnetic radiation without debonding the first layer from the first area at any other location at which the first layer is bonded to the first area.

14. The structure of claim 12 wherein at any location at which the first layer is bonded to the first area, the first layer is debondable from the first area by heat without debonding the first layer from the first area at any other location at which the first layer is bonded to the first area.

15. The structure of claim 12 wherein the first layer comprises a first sub-layer and a second sub-layer;

wherein at each location at which the first layer is bonded to the first area, the second sub-layer comprises an adhesive bonding the first layer to the first area and having a different composition than the first sub-layer; and

at each location at which the first layer is not bonded to the first area, the second sub-layer comprises a composition obtainable from the adhesive by application of electromagnetic radiation.

16. The structure of claim 12 wherein the first layer comprises a first sub-layer and a second sub-layer;

wherein at each location at which the first layer is bonded to the first area, the second sub-layer comprises an adhesive bonding the first layer to the first area and having a different composition than the first sub-layer; and

at each location at which the first layer is not bonded to the first area, the second sub-layer comprises a composition obtainable from the adhesive by application of heat.

17. The structure of claim 12 wherein:

at each location at which the first layer is bonded to the first area, the first layer comprises an adhesive bonded to the first area, the adhesive being debondable by application of electromagnetic radiation; and

at each location at which the first layer is not bonded to the first area, the first layer comprises a composition obtainable from the adhesive by application of electromagnetic radiation.

18. The structure of claim 12 wherein:

at each location at which the first layer is bonded to the first area, the first layer comprises an adhesive bonded to the first area, the adhesive being debondable by application of heat; and

at each location at which the first layer is not bonded to the first area, the first layer comprises a composition obtainable from the adhesive by application of heat.

19. The structure of claim 12 wherein the first area is an entire area of the integrated circuit.

20. The structure of claim 12 wherein the first layer is present in the final structure.

Assignments (6)
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 073508/0668 →
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 073508/0751 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 14, 2016
From: UZOH, CYPRIAN EMEKA
To: INVENSAS CORPORATION
Reel/Frame 038909/0658 →
Continuity (2)
Continuation 14095704 · Dec 3, 2013
Related Publication 20160293556A1 · Oct 6, 2016