Integrated electronic package and stacked assembly thereof
A wafer level packaging method entails providing electronic devices and providing a platform structure having cavities extending through the platform structure. The platform structure is mounted to a temporary support. One or more electronic devices are placed in the cavities with an active side of each electronic device facing the temporary support. The platform structure and the electronic devices are encapsulated in an encapsulation material to produce a panel assembly. Redistribution layers may be formed over the panel assembly, after which the panel assembly may be separated into a plurality of integrated electronic packages. The platform structure may be formed from a semiconductor material, and platform segments within each package provide a fan-out region for conductive interconnects, as well as provide a platform for a metallization layer and/or for forming through silicon vias.
1. An integrated electronic package comprising:
a platform segment having a cavity extending through said platform segment, said platform segment having a first surface and a second surface opposing said first surface, said platform segment comprising a semiconductor material;
a first electronic device residing in said cavity, said first electronic device having first active side at which first electrical contacts are located and a back side opposing said active side, wherein said active side is approximately coplanar with said first surface of said platform segment;
a second electronic device residing in said cavity and laterally displaced from said first electronic device, said second electronic device having a second active side at which second electrical contacts are located, wherein said second active side is approximately coplanar with said first surface of said platform segment; and
encapsulation material in said cavity, said encapsulation material coupling said first and second electronic devices to said platform segment, wherein said first and second active sides of said first and second electronic devices are exposed from said encapsulation material and said first and second surfaces of said platform segment are exposed from said encapsulation material.
2. The integrated electronic package of claim 1 wherein said platform segment comprises a portion of a silicon crystal wafer.
3. The integrated electronic package of claim 1 wherein said platform segment has a thickness that is greater than a height of said first electronic device.
4. The integrated electronic package of claim 3 wherein said back side of said first electronic device residing in said cavity is embedded in said encapsulation material.
5. The integrated electronic package of claim 1 further comprising a metallization layer formed directly on a non-cavity area of said platform segment.
6. The integrated electronic package of claim 1 further comprising a conductive via extending through said platform segment at a non-cavity area of said platform segment.
7. The integrated electronic package of claim 6 further comprising:
at least one insulating layer formed over said non-cavity area of said second surface of said platform segment;
an opening formed in said at least one insulating layer to expose said conductive via; and
a conductive interconnect extending through said opening in said at least one insulating layer and in electrical contact with said conductive via, said conductive interconnect extending over said non-cavity area of said platform segment.
8. The integrated electronic package of claim 1 further comprising:
at least one insulating layer formed over said active side of said first electronic device and over a non-cavity area of said platform segment;
an opening formed in said at least one insulating layer to expose one of said electrical contacts on said active side of said first electronic device; and
a conductive interconnect extending through said opening in said at least one insulating layer and extending over said non-cavity area of said platform segment.
9. The integrated electronic package of claim 8 wherein said conductive interconnect extends to and is exposed at a side wall of said integrated electronic package.
10. An integrated electronic package comprising:
a platform segment having a cavity extending through said platform segment, said platform segment having a first surface and a second surface opposing said first surface, said platform segment comprising a semiconductor material;
an electronic device residing in said cavity, said electronic device having an active side at which electrical contacts are located and a back side opposing said active side, wherein said active side is approximately coplanar with said first surface of said platform segment; and
encapsulation material in said cavity, said encapsulation material coupling said electronic device to said platform segment, wherein said active side of said electronic device is exposed from said encapsulation material and said first and second surfaces of said platform segment are exposed from said encapsulation material;
at least one insulating layer formed over said active side of said electronic device and over a non-cavity area of said platform segment;
an opening formed in said at least one insulating layer to expose one of said electrical contacts on said active side of said electronic device;
a conductive interconnect extending through said opening in said at least one insulating layer and extending over said non-cavity area of said platform segment, wherein said conductive interconnect extends to and is exposed at a side wall of said integrated electronic package; and
a conductive trace extending along said side wall, said conductive trace being in electrical communication with said conductive interconnect.
11. A stacked assembly comprising the integrated electronic package of claim 10 and a second integrated electronic package bonded with said integrated electronic package, said second integrated electronic package having a second conductive interconnect in electrical communication with said conductive trace.
12. A stacked assembly comprising:
a first integrated electronic package including:
a platform segment having a cavity extending through said platform segment, said platform segment having a first surface and a second surface opposing said first surface, said platform segment comprising a semiconductor material;
a first electronic device residing in said cavity, said electronic device having an active side at which electrical contacts are located and a back side opposing said active side, wherein said active side is approximately coplanar with said first surface of said platform segment;
encapsulation material in said cavity, said encapsulation material coupling said electronic device to said platform segment, wherein said active side of said electronic device is exposed from said encapsulation material and said first and second surfaces of said platform segment are exposed from said encapsulation material;
at least one insulating layer formed over said active side of said first electronic device and over a non-cavity area of said platform segment;
an opening formed in said at least one insulating layer to expose one of said electrical contacts on said active side of said at least one electronic device; and
a first conductive interconnect extending through said opening in said at least one insulating layer and extending over said non-cavity area of said platform segment, wherein said first conductive interconnect extends to and is exposed at a side wall of said first integrated electronic package;
a second integrated electronic package bonded with said first integrated electronic package, said second integrated electronic package including a second conductive interconnect; and
a conductive trace extending along said side wall, said conductive trace being in electrical communication with each of said first and second conductive interconnects.
13. The stacked assembly of claim 12 wherein said second integrated electronic package comprises:
a second platform segment having a second cavity extending through said second platform segment, said platform segment having a third surface, said second platform segment comprising a semiconductor material;
a second electronic device residing in said second cavity, said second electronic device having a second active side at which second electrical contacts are located, wherein said second active side is approximately coplanar with said third surface of said second platform segment;
at least one insulating layer formed over said third surface of said second platform segment;
a second opening formed in said at least one insulating layer to expose one of said second electrical contacts, wherein said second conductive interconnect extends through said second opening in said at least one insulating layer and is electrical contact with said second electrical contact.
14. The stacked assembly of claim 13 wherein said second conductive interconnect extends to and is exposed at a second side wall of said second integrated electronic package.
15. The stacked assembly of claim 13 wherein said at least one insulating layer formed over said third surface of said second platform segment and said second conductive interconnect are interposed between said first integrated electronic device and said second platform segment and said second electronic device of said second integrated electronic package.