Semiconductor device with reduced emitter efficiency
A method of producing a semiconductor device includes providing a semiconductor body having a front side 10 - 1 and a back side, wherein the semiconductor body includes a drift region having dopants of a first conductivity type and a body region having dopants of a second conductivity type complementary to the first conductivity type, a transition between the drift region and the body region forming a pn-junction. The method further comprises: creating a contact groove in the semiconductor body, the contact groove extending into the body region along a vertical direction pointing from the front side to the back side; and filling the contact groove at least partially by epitaxially growing a semiconductor material within the contact groove, wherein the semiconductor material has dopants of the second conductivity type.
1. A method of producing a semiconductor device, comprising:
providing a semiconductor body having a front side and a back side, the semiconductor body including:
a drift region having dopants of a first conductivity type; and
a body region having dopants of a second conductivity type complementary to the first conductivity type, a transition between the drift region and the body region forming a pn-junction;
creating a contact groove in the semiconductor body, the contact groove extending into the body region along a vertical direction pointing from the front side to the back side, a depth of the contact groove as measured between the first surface and a bottom of the contact groove along the vertical direction being less than a distance between the front side and the pn-junction as measured along the vertical direction; and
filling the contact groove at least partially by epitaxially growing a semiconductor material within the contact groove, wherein the semiconductor material has dopants of the second conductivity type,
wherein a dopant concentration of the epitaxially grown semiconductor material is lower than a maximum of the dopant concentration of the body region external of the contact groove.
2. The method of claim 1 , wherein the semiconductor body is provided such that it further includes a source region having dopants of the first conductivity type and being isolated from the drift region by the body region, and wherein the contact groove is at least partially laterally confined by the source region.
3. The method of claim 1 , wherein the dopant concentration of the epitaxially grown semiconductor material is lower than the maximum of the dopant concentration of the body region external of the contact groove at least by a factor of 10.
4. The method of claim 1 , wherein the depth of the contact groove amounts to at least 20% of the distance between the front side and the pn-junction as measured along the vertical direction.
5. The method of claim 1 , further comprising partially removing the epitaxially grown semiconductor material, thereby creating a recess in the semiconductor body.
6. The method of claim 5 , wherein the recess is at least partially laterally confined by the source region.
7. The method of claim 5 , further comprising filling the recess at least partially with a conductor material.
8. The method of claim 2 , wherein the semiconductor body comprises a transistor cell, the transistor cell comprising the drift region, the body region and the source region, and wherein the contact groove is created in the transistor cell, the contact groove extending into the body region of the transistor cell and being at least partially laterally confined by the source region of the transistor cell.