IP Library Granted Patent US 9,653,176
Granted Patent B2
US 9,653,176 · App. 15/184,878 · Granted May 16, 2017

Read disturb reclaim policy

Inventors: Yu Cai (San Jose, CA); Fan Zhang (Fremont, CA); Haibo Li (Sunnyvale, CA); June Lee (Sunnyvale, CA)
Assignee: SK Hynix Memory Solutions Inc.
G11C16/3431G06F11/076G06F11/079G06F11/0727G06F11/0793G11C7/02G11C16/0483G11C16/08G11C16/26G11C16/349G11C29/42G11C29/52G11C16/3418G11C16/3422G11C16/3427
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Quick Facts
Patent No.
US 9,653,176
App. No.
15/184,878
Granted
May 16, 2017
Kind
B2
Abstract

Memory systems may include a memory including a plurality of memory blocks and a controller. The controller calculates an effective read disturb based on both a direct neighbor read disturb count and a non-direct neighbor read disturb count. The controller selects a wordline with the largest effective read disturb for test read and deciding whether to reclaim the data of the block based on the errors on the wordline.

Claims (552)

1. A memory system, comprising:

a memory including a plurality of blocks; and

a controller configured to:

calculate an effective read disturb based on both a direct neighbor read disturb count and a non-direct neighbor read disturb count;

select a wordline with a largest effective read disturb for test read; and

decide whether to reclaim data of a block based on errors on the wordline, wherein the block is one of the plurality of blocks.

2. The memory system of claim 1 , further comprising an error threshold based on a difference between an error correction code (ECC) correction capability of the memory system and a total number of errors accumulated in the block.

3. The memory system of claim 1 , wherein the controller is further configured to:

calculate the non-direct neighbor read disturb count with a fixed ratio determined by a fixed ratio solution based on flash pre-characterization.

4. The memory system of claim 3 , wherein the controller uses the fixed ratio of 1:2 favoring direct neighbor read disturb.

5. The memory system of claim 1 , wherein the controller is further configured to:

calculate the non-direct neighbor read disturb count with an adaptive ratio determined by an adaptive ratio learning.

6. The memory system of claim 5 , wherein the adaptive ratio learning is determined based on a raw error number increase per one read disturb from direct neighbor wordline and a raw error number increase per one read disturb from non-direct neighbor wordline.

7. The memory system of claim 6 , wherein the raw error number increase per one read disturb from direct neighbor wordline is determined by

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8. The memory system of claim 6 , wherein the raw error number increase per one read disturb from non-direct neighbor wordline is determined by

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9. A method, comprising:

calculating an effective read disturb metric based on both direct neighbor read disturb count and non-direct neighbor read disturb count;

selecting a wordline with a largest effective read disturb for test read; and

deciding whether to reclaim data of a block based on errors on the wordline, wherein the block is one of the plurality of blocks.

10. The method of claim 9 , further comprising calculating the non-direct neighbor read disturb count with a fixed ratio determined by a fixed ratio solution based on flash pre-characterization.

11. The method of claim 10 , wherein the fixed ratio is 1:2 favoring direct neighbor read disturb.

12. The method of claim 9 , further comprising calculating the non-direct neighbor read disturb count with an adaptive ratio determined by an adaptive ratio learning.

13. The method of claim 12 , wherein the adaptive ratio learning is determined based on a raw error number increase per one read disturb from direct neighbor wordline and a raw error number increase per one read disturb from non-direct neighbor wordline.

14. The method of claim 13 , wherein the raw error number increase per one read disturb from direct neighbor wordline is determined by

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15. The method of claim 13 , wherein the raw error number increase per one read disturb from non-direct neighbor wordline is determined by

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16. A memory device, comprising:

a memory including a plurality of blocks;

one or more counters suitable for generating direct neighbor read disturb count and non-direct neighbor read disturb count;

a control circuit configured to:

calculate an effective read disturb metric based on both of the direct neighbor read disturb count and non-direct neighbor read disturb count;

select a wordline with a largest effective read disturb for test read; and

decide whether to reclaim data of a block based on errors on the word line, wherein the block is one of the plurality of blocks.

17. The memory device of claim 16 , wherein the non-direct neighbor read disturb count is calculated with a fixed ratio determined by a fixed ratio solution based on flash pre-characterization.

18. The memory device of claim 17 , wherein the fixed ratio is 1:2 favoring direct neighbor read disturb.

19. The memory device of claim 16 , wherein the non-direct neighbor read disturb count is calculated with an adaptive ratio determined by an adaptive ratio learning.

20. The memory device of claim 19 , wherein the adaptive ratio learning is determined based on a raw error number increase per one read disturb from direct neighbor wordline and a raw error number increase per one read disturb from non-direct neighbor wordline.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 15, 2017
From: SK HYNIX MEMORY SOLUTIONS INC.
To: SK HYNIX INC.
Reel/Frame 044899/0443 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 14, 2016
From: CAI, YU; ZHANG, FAN; LI, HAIBO; LEE, JUNE
To: SK HYNIX MEMORY SOLUTIONS INC.
Reel/Frame 039741/0462 →
Continuity (2)
Provisional Application 62180506 · Jun 16, 2015
Related Publication 20160372208A1 · Dec 22, 2016