Electronic die singulation method

1. A method of singulating a wafer comprising:

providing a semiconductor wafer having a plurality of die formed as part of the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has first and second opposing major surfaces, and wherein a layer of material is formed along the second major surface;

placing the semiconductor wafer onto a carrier substrate;

etching through the spaces to form singulation lines, wherein etching comprises stopping adjacent to the layer of material;

placing the semiconductor wafer and carrier substrate within a chamber, the chamber at least partially enclosing a pressure transfer vessel, wherein the pressure transfer vessel contains a fluid; and

moving a structure against the pressure transfer vessel thereby applying a pressure to the layer of material to separate the layer of material in the singulation lines.

2. The method of claim 1 , wherein placing the semiconductor wafer comprises placing the semiconductor wafer onto a carrier tape.

3. The method of claim 1 , wherein placing the semiconductor wafer and carrier substrate within the chamber comprises placing the pressure transfer vessel against the carrier substrate such that the carrier substrate is between the pressure transfer vessel and the semiconductor wafer.

4. The method of claim 3 , wherein the pressure transfer vessel contains a liquid.

5. The method of claim 4 , wherein the liquid comprises water.

6. The method of claim 3 further comprising placing a pressure plate between the pressure transfer vessel and the carrier substrate; and

wherein:

providing the semiconductor wafer comprises providing the layer of material comprising a conductive material;

placing the semiconductor wafer onto the carrier substrate comprises placing onto a carrier tape attached to a frame; and

applying the pressure comprises applying a pressure that is greater than about 500 KPa.

7. The method of claim 1 , further comprising heating one or more of the semiconductor wafer and the carrier substrate while applying the pressure.

8. The method of claim 7 , wherein heating comprises heating to a temperature greater than about 35 degrees Celsius.

9. The method of claim 1 further comprising placing a protective film proximate to the first major surface of the semiconductor wafer before applying the pressure.

10. The method of claim 1 , wherein:

applying the pressure comprises applying the pressure such that portions of the carrier substrate are extruded into the singulation lines to separate the layer of material, and

portions of the separated layer of material remain on the carrier substrate.

11. The method of claim 1 , wherein moving the structure comprises moving a compression structure against a bladder structure.

12. The method of claim 1 further comprising placing a pressure plate between the pressure transfer vessel and the carrier substrate before applying the pressure.

13. A method of singulating a semiconductor wafer comprising:

providing a semiconductor wafer having a plurality of die formed as part of the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has first and second opposing major surfaces, and wherein a layer of material is formed along the second major surface;

placing the semiconductor wafer onto a carrier substrate;

singulating the wafer through the spaces to form singulation lines, wherein singulating comprises leaving at least a portion of the layer of material adjacent the singulation lines; and

placing the semiconductor wafer and carrier substrate into a chamber, the chamber at least partially enclosing a pressure transfer vessel containing a fluid, wherein the pressure transfer vessel comprises a material having high elastic deformation; and

moving a structure against the pressure transfer vessel to apply a pressure to the second major surface to separate the layer of material in the singulation lines.

14. The method of claim 13 , wherein placing the semiconductor wafer and carrier substrate comprises placing the carrier substrate between the semiconductor wafer and the pressure transfer vessel, and wherein the method further comprises:

placing a pressure plate between the pressure transfer vessel and the carrier substrate.

15. The method of claim 13 , wherein:

moving the structure comprises moving the structure against a pressure transfer vessel containing a fluid comprising a liquid; and

moving the structure comprises moving the structure to apply a pressure greater than about 500 KPa.

16. The method of claim 13 , wherein:

providing the semiconductor wafer comprises providing the layer of material comprising a metal; and

singulating comprising plasma etching.

17. A method of singulating a substrate comprising:

providing a semiconductor substrate attached to a carrier substrate, the semiconductor substrate having a plurality of die formed as part of the semiconductor substrate and separated from each other by singulation lines, wherein the semiconductor substrate has first and second opposing major surfaces, and wherein a layer of material is formed overlying the second major surface, and wherein the singulation lines terminate adjacent to the layer of material;

placing the semiconductor substrate and carrier substrate within a chamber, the chamber at least partially enclosing a pressure transfer vessel that contains a fluid; and

moving a structure against the pressure transfer vessel thereby applying a pressure to the layer of material to separate the layer of material in the singulation lines.

18. The method of claim 17 , wherein placing the semiconductor substrate and carrier substrate within the chamber comprises placing the pressure transfer vessel against the carrier substrate such that the carrier substrate is between the pressure transfer vessel and the semiconductor substrate.

19. The method of claim 17 , wherein:

providing the semiconductor substrate comprises providing the layer of material comprising a conductive material;

placing the semiconductor substrate and carrier substrate within the chamber comprises providing a pressure transfer vessel that contains a fluid comprising a liquid; and

applying the pressure comprises applying a pressure greater than 500 KPa.

20. The method of claim 17 further comprising placing a protective film proximate to the first major surface of the semiconductor substrate before moving the structure.