Semiconductor device
The semiconductor device includes: a plurality of interlayer insulation films, each interlayer insulation film covering a front surface of a corresponding one of the gate electrodes and protruding from the front surface of the semiconductor substrate; the first metal film covering the front surface of the semiconductor substrate and plurality of the interlayer insulation films; and the protective insulation film covering a part of the first metal film. In a cross-section traversing the plurality of trenches, the end of the protective insulation film is above one of the interlayer insulation films, and a width of the one of the interlayer insulation films that is below the end of the protective insulation film is wider than widths of other interlayer insulation films.
1. A semiconductor device comprising:
a semiconductor substrate;
a plurality of trenches provided abreast on a front surface of the semiconductor substrate;
a plurality of gate insulation films, each gate insulation film covering an inner surface of a corresponding one of the trenches;
a plurality of gate electrodes, each gate electrode being provided in the corresponding trench and insulated from the semiconductor substrate by a corresponding one of the gate insulation films;
a plurality of interlayer insulation films, each interlayer insulation film covering a front surface of a corresponding one of the gate electrodes and protruding from the front surface of the semiconductor substrate;
a metal film covering the front surface of the semiconductor substrate and plurality of the interlayer insulation films; and
a protective insulation film covering a part of the metal film,
wherein
in a cross-section traversing the plurality of trenches, an end of the protective insulation film is above one of the interlayer insulation films, and a width of the one of the interlayer insulation films that is below the end of the protective insulation film is wider than widths of other interlayer insulation films.
2. The semiconductor device according to claim 1 , wherein
the one of the interlayer insulation films that is below the end of the protective insulation film is provided over some of the plurality of the gate electrodes.
3. A semiconductor device comprising:
a semiconductor substrate;
a plurality of trenches provided abreast on a front surface of the semiconductor substrate;
a plurality of gate insulation films, each gate insulation film covering an inner surface of a corresponding one of the trenches;
a plurality of gate electrodes, each gate electrode being provided in the corresponding trench and insulated from the semiconductor substrate by a corresponding one of the gate insulation films;
a plurality of interlayer insulation films, each interlayer insulation film covering a front surface of a corresponding one of the gate electrodes and protruding from the front surface of the semiconductor substrate;
a metal film covering the front surface of the semiconductor substrate and plurality of the interlayer insulation films; and
a protective insulation film covering a part of the metal film,
wherein
in a cross-section traversing the plurality of trenches, an end of the protective insulation film is above an interval portion between two adjacent ones of the interlayer insulation films, and a width of the interval portion below the end of the protective insulation film is wider than widths of other interval portions.