Semiconductor device having fin structure that includes dummy fins
A semiconductor device includes: a substrate, a fin-shaped structure on the substrate, and a dummy fin-shaped structure on the substrate and adjacent to the fin-shaped structure. Preferably, the fin-shaped structure includes a gate structure thereon and a first epitaxial layer adjacent to two sides of the gate structure, and the dummy fin-shaped structure includes a second epitaxial layer thereon. A contact plug is disposed on the first epitaxial layer and the second epitaxial layer. In addition, the dummy fin-shaped structure includes a curve, in which the curve is omega shaped.
1. A semiconductor device, comprising:
a substrate;
a fin-shaped structure on the substrate; and
a dummy fin-shaped structure on the substrate and adjacent to the fin-shaped structure, wherein the fin-shaped structure and the dummy fin-shaped structure comprise same material and the dummy fin-shaped structure comprises a curve.
2. The semiconductor device of claim 1 , wherein the curve is omega shaped.