Sidewall protection scheme for contact formation
Method of manufacturing a semiconductor device is described that uses sidewall protection of a recessed feature to prevent loss of critical dimension during a cleaning process to remove etch residue. According to one embodiment, the method includes providing a substrate containing a film thereon having a recessed feature with a sidewall and a bottom portion, depositing a conformal film on the sidewall and on the bottom portion, removing the conformal film from the bottom portion in an anisotropic etching process, where the remaining conformal film forms a protection film on the sidewall, and performing a cleaning process that removes etch residue from the recessed feature without etching the protection film or the sidewall.
1. A substrate processing method, comprising:
providing a substrate containing a film thereon having a recessed feature with a sidewall and a bottom portion, the substrate containing an etch residue in the recessed feature;
depositing a conformal film on the sidewall and on the bottom portion;
removing the conformal film from the bottom portion in an anisotropic etching process, wherein the remaining conformal film forms a protection film on the sidewall; and
performing a cleaning process that removes the etch residue from the recessed feature without etching the protection film or the sidewall.
2. The method of claim 1 , further comprising
following the cleaning process, performing an isotropic etching process to form a contact region below the protection film, the contact region having a width that is greater than a width of the recessed feature.
3. The method of claim 1 , wherein the cleaning process further etches the bottom portion to form a cavity below the protection film.
4. The method of claim 1 , wherein an etch stop layer forms the bottom portion of the recessed feature.
5. The method of claim 4 , further comprising
etching through the etch stop layer prior to performing the cleaning process to remove the residue.
6. The method of claim 4 , further comprising
etching through the etch stop layer after performing the cleaning process to remove the residue.
7. The method of claim 1 , wherein the conformal film includes a metal oxide film that is selected from the group consisting of HfO 2 , ZrO 2 , TiO 2 , Al 2 O 3 , and a combination thereof.
8. The method of claim 1 , wherein the conformal film is selected from the group consisting of a metal oxide film, a metal nitride film, a metal oxynitride film, a metal silicate film, and a combination thereof.
9. The method of claim 1 , wherein the conformal film has a thickness of about 4 nm or less.
10. The method of claim 1 , wherein the cleaning process includes a wet cleaning process that uses aqueous HCl, aqueous H 2 O 2 , aqueous HF, aqueous NH 4 OH, aqueous H 3 PO 4 , aqueous H 2 SO 4 , or a combination thereof.
11. The method of claim 1 , wherein the cleaning process includes a dry etching process that includes exposing the substrate to a gas containing HF, NH 3 , H 2 O 2 , a halogen-containing gas, or a combination thereof.
12. The method of claim 1 , wherein the cleaning process includes a chemical oxide removal (COR) process that removes silicon and oxygen.
13. The method of claim 1 , wherein depositing the conformal film includes atomic layer deposition (ALD).
14. A substrate processing method, comprising:
providing a substrate containing a film thereon having a recessed feature with a sidewall and an etch stop layer forming a bottom portion of the recessed feature, the substrate containing an etch residue in the recessed feature;
depositing a conformal metal oxide film by atomic layer deposition (ALD) on the sidewall and on the bottom portion;
removing the conformal metal oxide film from the bottom portion in an anisotropic etching process, wherein the remaining conformal metal oxide film forms a protection film on the sidewall; and
performing a cleaning process that removes the etch residue from the recessed feature without etching the protection film or the sidewall.
15. The method of claim 14 , further comprising
etching through the etch stop layer prior to performing the cleaning process to remove the residue.
16. The method of claim 14 , further comprising
etching through the etch stop layer after performing the cleaning process to remove the residue.
17. The method of claim 14 , wherein the metal oxide film is selected from the group consisting of HfO 2 , ZrO 2 , TiO 2 , Al 2 O 3 , and a combination thereof.
18. The method of claim 14 , wherein the cleaning process includes a wet cleaning process that uses aqueous HCl, aqueous H 2 O 2 , aqueous HF, aqueous NH 4 OH, aqueous H 3 PO 4 , aqueous H 2 SO 4 , or a combination thereof.
19. The method of claim 14 , wherein the cleaning process includes a dry etching process that includes exposing the substrate to a gas containing HF, NH 3 , H 2 O 2 , a halogen-containing gas, or a combination thereof.
20. The method of claim 14 , wherein the protection film has a thickness of about 2 nm or less.