Semiconductor package and method for fabricating base for semiconductor package
The invention provides a semiconductor package and a method for fabricating a base for a semiconductor package. The semiconductor package includes a conductive trace embedded in a base. A semiconductor device is mounted on the conductive trace via a conductive structure.
1. A semiconductor package, comprising:
a base comprising a recess with a bottom surface comprising an insulative material and a side wall comprising the insulative material;
a copper trace embedded in the recess such that a top surface of the copper trace is below a top surface of the base and below the insulative material in the side wall, wherein the top surface of the copper trace does not contact the base; and
a semiconductor device mounted on the copper trace via a conductive structure, wherein the conductive structure is in contact with the top surface of the copper trace.
2. The semiconductor package of claim 1 , wherein the base covers an entirety of a bottom surface of the copper trace underneath the conductive structure.
3. The semiconductor package of claim 1 , wherein the copper trace is elongated.
4. The semiconductor package of claim 1 , wherein the semiconductor device comprises a body having a first surface, a metal pad on the first surface, and an insulation layer covering at least a portion of the first surface of the body and a portion of the metal pad, wherein an exposed portion of the metal pad is mounted on the copper trace via the conductive structure.
5. The semiconductor package of claim 1 , wherein the base is a printed circuit board.
6. The semiconductor package of claim 1 , wherein the conductive structure is in contact with a portion of the top surface of the base.
7. The semiconductor package of claim 1 , wherein the conductive structure is in contact with the side wall of the recess.
8. The semiconductor package of claim 1 , wherein the top surface of the copper trace and a bottom surface of the copper trace have a same width.
9. The semiconductor structure of claim 8 , wherein the width of the top surface of the copper trace and the bottom surface of the copper trace is the same as a width of a bottom surface of the recess.
10. The semiconductor package of claim 1 , wherein the conductive structure comprises a conductive pillar structure comprising an under bump metallurgy (UBM) layer, a copper layer, a solder cap and a conductive buffer layer between the copper layer and the solder cap.
11. The semiconductor package of claim 10 , wherein the UBM layer contacts an exposed portion of a metal pad of the semiconductor device, and wherein the solder cap is in contact with at least a portion of the top surface of the base, at least one side wall of the recess and the top surface of the copper trace.
12. A semiconductor package, comprising:
a base comprising a recess with a bottom surface comprising an insulative material and a side wall comprising the insulative material;
a conductive trace embedded in the recess such that the conductive trace is in contact with the bottom surface, wherein a top surface of the conductive trace is below a top surface of the base and below the insulative material in the side wall; and
a semiconductor device mounted on the conductive trace via a conductive structure, wherein the conductive structure is in contact with an entire width of the top surface of the conductive trace.
13. The semiconductor package of claim 12 , wherein the conductive trace is elongated.
14. The semiconductor package of claim 12 , wherein the semiconductor device comprises a body having a first surface, a metal pad on the first surface, and an insulation layer covering at least a portion of the first surface of the body and a portion of the metal pad, wherein an exposed portion of the metal pad is mounted on the conductive trace via the conductive structure.
15. The semiconductor package of claim 12 , wherein the base is a printed circuit board.
16. The semiconductor package of claim 12 , wherein the conductive structure is in contact with a portion of the top surface of the base.
17. The semiconductor package of claim 12 , wherein the conductive structure is in contact with the side wall of the recess.
18. The semiconductor package of claim 12 , wherein the bottom surface of the recess is insulative.
19. The semiconductor package of claim 12 , and wherein the top surface of the conductive trace and a bottom surface of the conductive trace have a same width.
20. The semiconductor package of claim 19 , wherein the width of the top surface of the conductive trace and the bottom surface of the conductive trace is the same as a width of the bottom surface of the recess.
21. The semiconductor package of claim 12 , wherein the conductive trace is a single layer.
22. The semiconductor package of claim 21 , wherein the base covers an entirety of a bottom surface of the conductive trace underneath the conductive structure.
23. The semiconductor package of claim 12 , wherein the conductive structure comprises a conductive pillar structure comprising an under bump metallurgy (UBM) layer, a copper layer, a solder cap and a conductive buffer layer between the copper layer and the solder cap.
24. The semiconductor package of claim 23 , wherein the UBM layer contacts an exposed portion of a metal pad of the semiconductor device, and wherein the solder cap is in contact with at least a portion of the top surface of the base, at least one side wall of the recess and the top surface of the conductive trace.
25. The semiconductor package of claim 12 , further comprising:
an underfill between the semiconductor device and the base.
26. The semiconductor package of claim 25 , wherein the underfill comprises capillary underfill (CUF), molded underfill (MUF), nonconductive paste (NCP), nonconductive film (NCF) or a combination thereof.