Thin film transistor and thin film transistor array panel including the same
A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
1. A transistor array panel, comprising:
a light blocking layer;
an oxide semiconductor disposed over the light blocking layer and including an oxide semiconductor material;
a source region and a drain region positioned at two opposite sides with respect to the oxide semiconductor and positioned at a same layer as the oxide semiconductor;
an insulating layer which is disposed over the oxide semiconductor;
a gate electrode disposed over the insulating layer,
the light blocking layer overlapping the gate electrode with the oxide semiconductor interposed between the gate electrode and the light blocking layer;
a passivation layer disposed over the gate electrode; and
a data input electrode and a data output electrode disposed over the passivation layer,
wherein the data input electrode is connected to the source region, and the data output electrode is connected to the drain region, and
a first layer is disposed over a surface of the source region or a surface of the drain region,
wherein the first layer is in direct contact with the surface of the source region or the surface of the drain region.
2. The transistor array panel of claim 1 ,
wherein the first layer comprises indium.
3. The transistor array panel of claim 2 ,
wherein the first layer has a height of less than about 200 nm.
4. The transistor array panel of claim 1 , further comprising:
a buffer layer disposed between the light blocking layer and the oxide semiconductor.
5. The transistor array panel of claim 4 ,
wherein the buffer layer or the insulating layer includes an insulating oxide.
6. The transistor array panel of claim 1 , further comprising:
a low conductive region positioned between the source region or the drain region and the oxide semiconductor,
wherein a second layer is disposed over a surface of the low conductive region.
7. The transistor array panel of claim 6 ,
wherein the second layer comprises indium.
8. The transistor array panel of claim 7 ,
wherein the first layer and the second layer have a same material as each other.
9. The transistor array panel of claim 6 ,
wherein an edge boundary of the gate electrode is positioned inside an edge boundary of the insulating layer, wherein the edge boundary of the insulating layer is positioned inside an edge boundary of the light blocking layer, and wherein the passivation layer directly contacts a side surface of the insulating layer and a side surface of the gate electrode.
10. The transistor array panel of claim 9 ,
wherein the edge boundary of the insulating layer is substantially aligned to a boundary between the low conductive region and the source region or the drain region.
11. The transistor array panel of claim 10 ,
wherein the edge boundary of the gate electrode is substantially aligned to an edge boundary of the oxide semiconductor.
12. A transistor array panel of claim 1 , comprising: a light blocking layer; an oxide semiconductor disposed over the light blocking layer and including an oxide semiconductor material; a source region and a drain region positioned at two opposite sides with respect to the oxide semiconductor and positioned at a same layer as the oxide semiconductor; an insulating layer which is disposed over the oxide semiconductor; a gate electrode disposed over the insulating layer, the light blocking layer overlapping the gate electrode with the oxide semiconductor interposed between the gate electrode and the light blocking layer; a passivation layer disposed over the gate electrode; a data input electrode and a data output electrode disposed over the passivation layer, wherein the data input electrode is connected to the source region, and the data output electrode is connected to the drain region; a first layer disposed over a surface of the source region; and wherein the first layer is disposed between a layer of the source region and the passivation layer.
13. A transistor array panel, comprising:
a light blocking layer;
an oxide semiconductor disposed over the light blocking layer and including an oxide semiconductor material;
a source region and a drain region positioned at two opposite sides with respect to the oxide semiconductor and positioned at a same layer as the oxide semiconductor;
a low conductive region positioned between the source region or the drain region and the oxide semiconductor;
an insulating layer which is disposed over the oxide semiconductor;
a gate electrode disposed over the insulating layer, the light blocking layer overlapping the gate electrode with the oxide semiconductor interposed between the gate electrode and the light blocking layer;
a passivation layer disposed over the gate electrode;
a data input electrode and a data output electrode disposed over the passivation layer, wherein the data input electrode is connected to the source region, and the data output electrode is connected to the drain region;
a first layer disposed over a surface of the source region or a surface of the drain region; and
a second layer disposed over a surface of the low conductive region, wherein the second layer is disposed between the low conductive region and the insulating layer.