Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device, includes: forming a film, wherein the act of forming a film includes: transferring a substrate to a process chamber; supplying a first gas to the substrate; and supplying a second gas to the substrate by converting the second gas to plasma with a first high-frequency wave; and performing an adjustment after the act of forming the film, wherein the act of performing includes: measuring a charging condition of the substrate, setting a second high-frequency wave based on the measured charging condition, supplying a third gas to the substrate by converting the third gas to plasma with the second high-frequency wave, and adjusting the charging condition of the substrate.
1. A method of manufacturing a semiconductor device, comprising:
forming a film, wherein the act of forming the film includes: transferring a substrate to a process chamber; supplying a first gas to the substrate; and supplying a second gas to the substrate by converting the second gas to plasma with a first high-frequency wave; and
performing an adjustment after the act of forming the film, wherein the act of performing the adjustment includes: measuring a charging condition of the substrate, setting a second high-frequency wave based on the measured charging condition, supplying a third gas to the substrate by converting the third gas to plasma with the second high-frequency wave, and adjusting the charging condition of the substrate.
2. The method of claim 1 , wherein the act of performing the adjustment is repeated until the charging condition of the substrate falls within a predetermined set value.
3. The method of claim 2 , wherein the act of forming the film and the act of performing the adjustment are alternately performed.
4. The method of claim 3 , wherein in the act of performing the adjustment, an amount of charged particles generated by the plasma and supplied to the substrate is adjusted by adjusting one or both of electric power and frequency of the second high-frequency wave based on the measured charging condition.
5. The method of claim 4 , wherein electric power of the second high-frequency wave is smaller than electric power of the first high-frequency wave.
6. The method of claim 2 , wherein in the act of performing the adjustment, an amount of charged particles generated by the plasma and supplied to the substrate is adjusted by adjusting one or both of electric power and frequency of the second high-frequency wave based on the measured charging condition.
7. The method of claim 2 , wherein electric power of the second high-frequency wave is smaller than electric power of the first high-frequency wave.
8. The method of claim 1 , wherein the act of forming the film and the act of performing the adjustment are alternately performed.
9. The method of claim 1 , wherein in the act of performing the adjustment, an amount of charged particles generated by the plasma and supplied to the substrate is adjusted by adjusting one or both of electric power and frequency of the second high-frequency wave based on the measured charging condition.
10. The method of claim 1 , wherein electric power of the second high-frequency wave is smaller than electric power of the first high-frequency wave.