Electronic device including a conductive electrode
View Patent ↗An electronic device can include a semiconductor layer, an insulating layer overlying the semiconductor layer, and a conductive electrode. In an embodiment, a first conductive electrode member overlies the insulating layer, and a second conductive electrode member overlies and is spaced apart from the semiconductor layer. The second conductive electrode member has a first end and a second end opposite the first end, wherein each of the semiconductor layer and the first conductive electrode member are closer to the first end of the second conductive electrode member than to the second end of the second conductive electrode member. In another embodiment, the conductive electrode can be substantially L-shaped. In a further embodiment, a process can include forming the first and second conductive electrode members such that they abut each other. The second conductive electrode member can have the shape of a sidewall spacer.
1. An electronic device comprising:
a semiconductor layer;
a first insulating layer overlying the semiconductor layer;
a transistor having a gate electrode;
a first conductive electrode comprising a first conductive electrode member and a second conductive electrode member, wherein:
the first conductive electrode member overlies the first insulating layer;
the second conductive electrode member overlies and is spaced apart from the semiconductor layer:
the first conductive electrode member abuts the second conductive electrode member;
the second conductive electrode member has a first end and a second end opposite the first end; and
each of the semiconductor layer and the first conductive electrode member is closer to the first end of the second conductive electrode member than to the second end of the second conductive electrode member; and
a second conductive electrode that includes a third conductive electrode member and a fourth conductive electrode member,
wherein no conductive electrode is disposed between the first and second conductive electrodes.
2. The electronic device of claim 1 , wherein the gate electrode is closer to the first conductive electrode member than to the second conductive electrode member.
3. The electronic device of claim 1 , further comprising:
a second insulating layer overlying the first conductive electrode member, wherein the second insulating layer defines a first contact opening and a second contact opening;
a first conductive plug that abuts the gate electrode within the first contact opening; and
a second conductive plug that abuts the second conductive electrode member.
4. The electronic device of claim 3 , wherein no contact opening through the second insulating layer extends to the first conductive electrode member.
5. The electronic device of claim 1 , wherein:
the first conductive electrode member has an uppermost point that lies at a first elevation;
the second conductive electrode member has an uppermost point that lies at a second elevation; and
the gate electrode has an uppermost point that lies at a third elevation that is closer to the second elevation than to the first elevation.
6. The electronic device of claim 5 , wherein:
a difference between the first and third elevations is at least approximately 0.4 micron; and
a difference between the second and third elevations is no greater than approximately 0.2 micron.
7. The electronic device of claim 1 , wherein a first conductive electrode is substantially L-shaped and includes the first and second conductive electrode members.
8. The electronic device of claim 1 , wherein each of the second and fourth conductive electrode members extends to an elevation higher than the first and third conductive electrode members.
9. The electronic device of claim 7 , wherein:
the first conductive electrode member extends in a first lateral direction away from the second and fourth conductive electrode members;
the third conductive electrode member extends in a second lateral direction away from the second and fourth conductive electrode members;
the first and second lateral directions are opposite directions.
10. The electronic device of claim 1 , wherein the gate electrode is not disposed between the first and second conductive electrodes.
11. The electronic device of claim 1 , wherein a single conductive plug contacts the second and fourth conductive electrode members.
12. The electronic device of claim 1 , wherein the transistor further comprises a source region, wherein the source region and the first and second conductive electrode members are electrically connected to one another.
13. The electronic device of claim 12 , wherein the transistor further comprises a drain region that includes a horizontally-oriented doped region that is disposed under the first insulating layer and the first conductive electrode member.
14. The electronic device of claim 13 , further comprising:
a buried conductive region underlying the semiconductor layer; and
a vertical conductive region that extends through the semiconductor layer and is electrically connected to the horizontally-oriented doped region and the buried conductive region,
wherein each of the first and second conductive electrode members is disposed between the gate electrode and the buried conductive region.
15. An electronic device comprising:
a semiconductor layer;
a first insulating layer overlying the semiconductor layer;
a transistor having a gate electrode;
a first conductive electrode member overlying the first insulating layer;
a second conductive electrode member overlying and spaced apart from the semiconductor layer, wherein:
the first conductive electrode member abuts the second conductive electrode member;
the second conductive electrode member has a first end and a second end opposite the first end;
each of the semiconductor layer and the first conductive electrode member is closer to the first end of the second conductive electrode member than to the second end of the second conductive electrode member;
the first conductive electrode member has an uppermost point that lies at a first elevation;
the second conductive electrode member has an uppermost point that lies at a second elevation; and
the gate electrode has an uppermost point that lies at a third elevation that is closer to the second elevation than to the first elevation.
16. The electronic device of claim 15 , further comprises a second conductive electrode that includes a third conductive electrode member and a fourth conductive electrode member, wherein each of the second and fourth conductive electrode members extends to an elevation higher than the first and third conductive electrode members.
17. The electronic device of claim 16 , wherein a single conductive plug contacts the second and fourth conductive electrode members and is spaced apart from the first and third conductive members.
18. The electronic device of claim 16 , wherein the gate electrode is not disposed between the first and second conductive electrodes.
19. An electronic device comprising:
a semiconductor layer;
a first insulating layer overlying the semiconductor layer;
a transistor having a gate electrode and a source region;
a first conductive electrode member overlying the first insulating layer;
a second conductive electrode member overlying and spaced apart from the semiconductor layer, wherein:
the first conductive electrode member abuts the second conductive electrode member;
the second conductive electrode member has a first end and a second end opposite the first end;
each of the semiconductor layer and the first conductive electrode member is closer to the first end of the second conductive electrode member than to the second end of the second conductive electrode member; and
the source region and the first and second conductive electrode members are electrically connected to one another.
20. The electronic device of claim 19 , wherein the transistor further comprises a drain region that includes a horizontally-oriented doped region that is disposed under the first insulating layer and the first conductive electrode member.
21. The electronic device of claim 20 , further comprising:
a buried conductive region underlying the semiconductor layer; and
a vertical conductive region that extends through the semiconductor layer and is electrically connected to the horizontally-oriented doped region and the buried conductive region,
wherein each of the first and second conductive electrode members is disposed between the gate electrode and the buried conductive region.