Damaging integrated circuit components

1. A method comprising:

forming a multiple layer within an integrated circuit region, wherein the multiple layer includes one or more pairs of reactive materials;

igniting the multiple layer so that the one or more pairs of reactive materials react pairwise in one or more exothermic reactions; and

damaging one or more components of an integrated circuit with energy released by the one or more exothermic reactions such that the one or more components are rendered, at least in part, permanently inoperable.

2. The method of claim 1 , wherein within the integrated circuit region is one or more of: i) on top of a back-end-of-the-line (BEOL) portion; ii) within the BEOL portion; iii) within a memory level portion; iv) within a front-end-of-the-line (FEOL) portion; v) embedded in a substrate; and vi) on bottom of a thinned substrate.

3. The method of claim 1 , wherein the one or more components of the integrated circuit that are damaged are one or more of: i) one or more interconnects; ii) one or more transistors; iii) one or more memory arrays; and iv) circuitry for one or more applications.

4. The method of claim 1 , wherein the one or more pairs of reactive materials are selected from the group consisting of: aluminum (Al), antimony (Sb), barium (Ba), beryllium (Be), bismuth (Bi), boron (B), cadmium (Cd), calcium (Ca), carbon (C), cerium (Ce), cobalt (Co), chromium (Cr), copper (Cu), germanium (Ge), hafnium (Hf), iron (Fe), lanthanum (La), lead (Pb), lithium (Li), magnesium (Mg), manganese (Mn), molybdenum (Mo), niobium (Nb), nickel (Ni), palladium (Pd), potassium (K), praseodymium (Pr), platinum (Pt), plutonium (Pu), samarium (Sm), selenium (Se), silicon (Si), sodium (Na), strontium (Sr), sulfur (S), tantalum (Ta), tellurium (Te), thorium (Th), tin (Sn), titanium (Ti), tungsten (W), uranium (U), vanadium (V), Yttrium (Y), zinc (Zn), and zirconium (Zr).

5. The method of claim 1 , wherein the one or more pairs of reactive materials are selected from the group consisting of: aluminum (Al), copper (Cu), niobium (Nb), nickel (Ni), palladium (Pd), platinum (Pt), silicon (Si), and titanium (Ti).

6. The method of claim 1 , wherein the multiple layer includes one or more barrier layers.

7. The method of claim 6 , wherein each of the one or more barrier layers include one or more materials selected from the group consisting of: one or more transition metals, one or more transition metal oxides, one or more transition metal nitrides, and one or more aluminum oxides.

8. The method of claim 6 , wherein each of the one or more barrier layers include one or more materials selected from the group consisting of: titanium (Ti); zirconium (Zr); hafnium (Hf); vanadium (V); niobium (Nb); tantalum (Ta); one or more oxides of Ti, Zr, Hf, V, Nb, and Ta; and one or more nitrides of Ti, Zr, Hf, V, Nb, and Ta.

9. The method of claim 1 , wherein the multiple layer includes an insulating layer.

10. The method of claim 9 , wherein the insulating layer is silicon dioxide.

11. An integrated circuit (IC) comprising:

a substrate;

a front-end-of-the-line (FEOL) portion, wherein the FEOL portion rests on top of and in contact with the substrate;

a memory level portion, wherein the memory level portion rests on top of and in contact with the FEOL portion;

a back-end-of-the-line (BEOL) portion, wherein the BEOL portion rests on top of and in contact with the memory level portion; and

a multiple layer that includes one or more pairs of reactive materials, wherein the multiple layer is one or more of: i) on top of the BEOL portion; ii) within the BEOL portion; iii) within the memory level portion; iv) within the FEOL portion; v) embedded in the substrate; and vi) on bottom of a thinned substrate.

12. The IC of claim 11 , wherein the one or more pairs of reactive materials are selected from the group consisting of: aluminum (Al), antimony (Sb), barium (Ba), beryllium (Be), bismuth (Bi), boron (B), cadmium (Cd), calcium (Ca), carbon (C), cerium (Ce), cobalt (Co), chromium (Cr), copper (Cu), germanium (Ge), hafnium (Hf), iron (Fe), lanthanum (La), lead (Pb), lithium (Li), magnesium (Mg), manganese (Mn), molybdenum (Mo), niobium (Nb), nickel (Ni), palladium (Pd), potassium (K), praseodymium (Pr), platinum (Pt), plutonium (Pu), samarium (Sm), selenium (Se), silicon (Si), sodium (Na), strontium (Sr), sulfur (S), tantalum (Ta), tellurium (Te), thorium (Th), tin (Sn), titanium (Ti), tungsten (W), uranium (U), vanadium (V), Yttrium (Y), zinc (Zn), and zirconium (Zr).

13. The IC of claim 11 , wherein the one or more pairs of reactive materials are selected from the group consisting of: aluminum (Al), copper (Cu), niobium (Nb), nickel (Ni), palladium (Pd), platinum (Pt), silicon (Si), and titanium (Ti).

14. The IC of claim 11 , wherein the multiple layer includes one or more barrier layers.

15. The IC of claim 14 , wherein each of the one or more barrier layers include one or more materials selected from the group consisting of: one or more transition metals, one or more transition metal oxides, one or more transition metal nitrides, and one or more aluminum oxides.

16. The IC of claim 14 , wherein each of the one or more barrier layers include one or more materials selected from the group consisting of: titanium (Ti); zirconium (Zr); hafnium (Hf); vanadium (V); niobium (Nb); tantalum (Ta); one or more oxides of Ti, Zr, Hf, V, Nb, and Ta; and one or more nitrides of Ti, Zr, Hf, V, Nb, and Ta.

17. The IC of claim 11 , wherein the multiple layer includes an insulating layer.

18. The IC of claim 17 , wherein the insulating layer is silicon dioxide.